DMG8880LSS-13 Allicdata Electronics
Allicdata Part #:

DMG8880LSS-13DITR-ND

Manufacturer Part#:

DMG8880LSS-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 11.6A 8SOIC
More Detail: N-Channel 30V 11.6A (Ta) 1.43W (Ta) Surface Mount ...
DataSheet: DMG8880LSS-13 datasheetDMG8880LSS-13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.43W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1289pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27.6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The DMG8880LSS-13 is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) in a standard SMD package, and is most commonly used for power management and amplifier applications.

The DMG8880LSS-13 utilizes advanced NexFET Technology, a hallmark of Fairchild Semiconductor’s process, which offers smaller die size, reduced switching losses, and improved avalanche capability over traditional MOSFETs. It features low on-state resistance of 0.95 Ohm in SOT-23 package and high-current handling capabilities up to 1.5 A. The device is also RoHS compliant and features extremely high ESD protection, making it suitable for use in a variety of high-power applications.

The working principles of the DMG8880LSS-13 are based on MOSFETs, which use a voltage gate to control current flow. To turn the device on, the voltage applied to the gate terminal must be higher than the threshold voltage, which causes electrons to flow from the source terminal to the drain terminal, creating a conduction path. When the voltage applied to the gate terminal is lowered, the conduction path is broken and the electrons no longer flow from source to drain, thus turning off the device.

The DMG8880LSS-13 is ideal for a variety of power management and amplifier applications, such as switching power supplies, switch mode power converters, and operational amplifiers. It is also suitable for use in medical equipment and other high-reliability applications, due to its high ESD protection. Furthermore, its low on-state resistance and high current handling capabilities make it well-suited for high-power applications, such as power amplifiers, switched mode power supplies, and DC-DC converters.

In summary, the DMG8880LSS-13 is a high-performance, RoHS-compliant N-channel MOSFET in a standard SMD package. It utilizes advanced NexFET Technology for small die size, reduced switching losses, and improved avalanche capability. It features low on-state resistance of 0.95 Ohm in SOT-23 package and high current handling capabilities up to 1.5 A. It is suitable for use in a variety of power management and amplifier applications, such as switching power supplies, switch mode power converters, and operational amplifiers, as well as high-reliability applications, due to its high ESD protection. In addition, its low on-state resistance and high current handling capabilities make it well-suited for high-power applications.

The specific data is subject to PDF, and the above content is for reference

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