DMT2004UFDF-13 Allicdata Electronics
Allicdata Part #:

DMT2004UFDF-13-ND

Manufacturer Part#:

DMT2004UFDF-13

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET NCH 24V 14.1A UDFN2020
More Detail: N-Channel 24V 14.1A (Ta) 800mW (Ta), 12.5W (Tc) Su...
DataSheet: DMT2004UFDF-13 datasheetDMT2004UFDF-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.13693
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type F)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 53.7nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 6 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Drain to Source Voltage (Vdss): 24V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMT2004UFDF-13 is a field effect transistor (FET) that belongs to the single metal oxide semiconductor field effect transistor (MOSFET) family. It has excellent current handling properties, high input impedance, and low noise characteristics. It is primarily used for high voltage applications and has been widely utilized in electronic switching, amplification, and radio frequency applications. This article will explain the applications field and working principle of this particular FET.

The DMT2004UFDF-13 is best suited for high voltage applications due to its very low on resistance when compared to other FETs. It has a standing gate voltage up to 80V, a high Saturation Drain current (>4A), and a high gate input capacitance rating. This FET is perfect for applications where there is a need for precise switching control, such as motor control, thyristors, and switching regulators. Additionally, its high input capacitance also allows it to be used in high frequency applications. Since it is an insulation channel MOSFET, it can be used in applications where reverse voltage protection is necessary.

In terms of working principle, the DMT2004UFDF-13 operates on the principle of a transfer function. It is built with a gate that is controllable, allowing for the adjustment of the input voltage levels to provide different output voltage levels. The gate is designed to experience a perfectly linearly transfer function throughout the device’s operating range. When a voltage is applied across the gate, a small current flows through the channel and modulates the output. This is done by changing the effective resistance of the channel, resulting in a change in output amplitude. This is referred to as the linear transfer function.

The DMT2004UFDF-13 also has a high input impedance, allowing it to be used in applications where there is a need for a low input voltage drop. This also allows it to be used in power supply circuits. Additionally, it has a low noise characteristic, which is necessary in applications such as audio amplifiers. Additionally, this FET is well suited for amplifier circuits that use negative feedback, as well as radio frequency applications.

In conclusion, the DMT2004UFDF-13 provides excellent current handling capabilities and is the perfect choice for high voltage applications. It has a high standing gate voltage, a low on resistance, and a high Saturating Drain current. Additionally, its high input capacitance and low noise characteristics allow it to be utilized in sophisticated electronic applications. The FET operates on the principle of a transfer function, allowing for precise switching control, as well as a high input impedance. This makes it useful in a variety of applications, including motor control, thyristors, switching regulators, power supplies, and amplifiers utilizing negative feedback.

The specific data is subject to PDF, and the above content is for reference

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