
Allicdata Part #: | DMT2004UFG-13-ND |
Manufacturer Part#: |
DMT2004UFG-13 |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 24V 70A POWERDI3333 |
More Detail: | N-Channel 24V 70A (Tc) 2.3W (Ta) Surface Mount Pow... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.16283 |
Vgs(th) (Max) @ Id: | 1.45V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerDI3333-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1683pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 53.7nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 24V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMT2004UFG-13 application field and working principle
The DMT2004UFG-13 is a P-Channel Power MOSFET. It is specifically designed for P-channel applications in digital circuits, low frequency switching, and low voltage/low power operation. It is a transistor-type device, in which the drain and source are separated by a dielectric layer. The current from the drain to the source is regulated by varying the width of the conducting channel. The DMT2004UFG-13 is highly popular in today\'s electronic devices due to its small size, high performance, and low on-resistance.
The DMT2004UFG-13 is specifically designed for applications that require fast switching and high reliability. Its on-resistance of 0.0754 Ohms allows for high current handling capability, as well as low power consumption. In addition, the device has a low input capacitance of 6.8pF. This allows for faster switching, as well as better performance in clock distribution applications.
The working principle of the DMT2004UFG-13 is quite simple. The two terminals of the device are the source and the drain. The source terminal is the source of electrons, while the drain terminal is the place where electrons are delivered. When a voltage is applied to the gate terminal, a conducting channel is formed between the source and the drain. This channel helps to control the flow of electrons from the source to the drain. The MOSFET is then able to control the current through varying the width of the conducting channel.
The DMT2004UFG-13 is widely used in low voltage/low power applications, such as smartphone and laptop battery chargers, USB wall adapters, and light dimmers. In addition, it is also used in digital circuits, such as digital logic gates and flip-flops. The DMT2004UFG-13 is also popular for applications that require fast switching, such as pulse width modulators and motor control circuits.
The DMT2004UFG-13 is an exceptionally reliable and cost-effective device that is ideal for low voltage/low power applications. Its high performance and low on-resistance make it a popular choice for digital, as well as low frequency switching applications. In addition, its small size and low input capacitance make it suitable for clock distribution applications.
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