| Allicdata Part #: | DMT4002LPS-13-ND |
| Manufacturer Part#: |
DMT4002LPS-13 |
| Price: | $ 0.39 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 40V 100A POWERDI5060 |
| More Detail: | N-Channel 40V 100A (Ta) 2.3W Surface Mount PowerDI... |
| DataSheet: | DMT4002LPS-13 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.39200 |
| 10 +: | $ 0.38024 |
| 100 +: | $ 0.37240 |
| 1000 +: | $ 0.36456 |
| 10000 +: | $ 0.35280 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | PowerDI5060-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.3W |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6771pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 116.1nC @ 10V |
| Series: | Automotive, AEC-Q101 |
| Rds On (Max) @ Id, Vgs: | 1.8 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The DMT4002LPS-13 is a single P-Channel MOSFET developed by Toshiba that finds application in a variety of devices, from audio amplifiers to DC-DC converters. Its extremely low on-state resistance, combined with high voltage ratings and wide operating temperature range make it an ideal device for switching and amplifier applications. Understanding its working principle and field of applications is key to get maximum performance from this powerful component.
Introduction
MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are one of the most widely used transistors in modern electronics due to their low power consumption, high voltage and current ratings, and superior switching characteristics. Unlike bipolar transistors, MOSFETs are voltage-controlled and have no cutoff region, making them very efficient for power switching applications. The DMT4002LPS-13 is a single P-channel MOSFET and is the most powerful and energy efficient P-channel device developed by Toshiba.
Features
The main features of the DMT4002LPS-13 include:
- Low on-state resistance (RDSON): 8.1mΩ
- Continuous Drain Current (ID): 28A
- Operating Voltage Range (VDSS): -30V to -24V
- Power Dissipation (PD): 2.5W
- Max junction temperature (TJmax): 125°C
- Gate-source voltage (VGS): -4V to -15V
Working Principle
The DMT4002LPS-13 is a single P-channel MOSFET, which means that it has a single P-type semiconductor channel connecting the source and drain terminals. When the voltage at the gate is greater than the voltage at the source, current can flow through the channel, turning the MOSFET on. When the gate voltage is at or below the source voltage, the MOSFET is off, blocking current. The size of the conductive channel between the source and drain is proportional to the gate voltage, meaning that the thicker the channel, the more current can be passed, and the lower the resistance across the MOSFET.
Applications
The DMT4002LPS-13 is an ideal device for switching applications due to its low on-state resistance and wide operating temperature range, which ensures reliable operation over extended periods of time. It can be used in place of mechanical relays for switching applications and can also be used to amplify audio signals for audio amplifiers.
In addition, the DMT4002LPS-13 can also be used for DC-DC (direct current to direct current) converter applications. In DC-DC converters, a MOSFET is used to control the voltage applied to a coil or transformer in order to transform one voltage level to another. The low on-state resistance of the D
The specific data is subject to PDF, and the above content is for reference
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DMT4002LPS-13 Datasheet/PDF