Allicdata Part #: | DMT4005SCT-ND |
Manufacturer Part#: |
DMT4005SCT |
Price: | $ 1.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET NCH 40V 100A TO220AB |
More Detail: | N-Channel 40V 100A (Tc) 2.3W (Ta), 104W (Tc) Throu... |
DataSheet: | DMT4005SCT Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 0.99616 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.3W (Ta), 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3062pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 49.1nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The DMT4005SCT is a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed to be used as a switch or amplifier under differing electrical conditions. It is a member of the 40V medium voltage single CMOS (Complementary Metal-Oxide-Semiconductor) family and uses a common drain connection to control its operation. This device is well-suited for use in controlling intermediate DC voltages, as it can switch high currents with minimal voltage losses. Its small size and low on-state resistance makes DMT4005SCT suitable for many applications like motor control, low power DC-DC converter, and lighting control.
The DMT4005SCT consists of a transistor and a diode connected in series within a single package. The transistor is epitaxial construction, with a drain to source breakdown voltage of 40V and a maximum on-state current of 5 amps. It has a low gate threshold voltage of 2V and a gate to source voltage of 8V. The device’s source and drain resistances are 1.5ohm and 0.2ohm respectively. The device is manufactured using high performance process technology and has an operating temperature range of -55°C to 150°C.
The DMT4005SCT operates under the two-terminal, metal-oxide-semiconductor (MOSFET) principle. This principle states that electrons move between the source and drain of a transistor in response to a voltage on the gate. The gate voltage acts as a switch, controlling the flow of current between the source and drain. In the case of the DMT4005SCT, the N-channel design allows current to flow between the source and drain only when the voltage on the gate is sufficient to overcome the gate threshold voltage. When the gate voltage is applied, the electrons are drawn from the source to the gate, thereby allowing current to flow between the source and drain. Similarly, when the voltage on the gate is lowered, current flow is blocked.
The DMT4005SCT has numerous applications in numerous fields, including electrical motor control, DC-DC converters, and LED lighting control. As a motor controller, it can be used as a switch to control the voltage applied to the motor, as well as a regulator to control the current flow. Similarly, it can be used in a DC-DC converter circuit to control the voltage across the load. It can also be used in LED lighting control circuits, as the low gate threshold voltage of 2 volts makes it well-suited for use in low-voltage systems. Its small form factor and low on-state resistance make it possible to switch high currents with minimal losses.
In summary, the DMT4005SCT is an N-channel MOSFET designed for use as a switch or amplifier under various electrical conditions. It offers a low gate threshold voltage of 2 volts and a drain-source breakdown voltage of 40V. Its small size, low on-state resistance, and high power capability make it suitable for a variety of applications such as motor control, DC-DC converters, and LED lighting control.
The specific data is subject to PDF, and the above content is for reference
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