Name: DN3135K1-G Discrete Semiconductor Products
Brand: Microchip Technology
SKU: DN3135K1-GTR-ND
Price: 0.28 USD
Availability: InStock

DN3135K1-G Discrete Semiconductor Products
Allicdata Part #:	DN3135K1-GTR-ND
Manufacturer Part#:	DN3135K1-G
Price:	$ 0.28
Product Category:	Discrete Semiconductor Products
Manufacturer:	Microchip Technology
Short Description:	MOSFET N-CH 350V 72MA SOT23-3
More Detail:	N-Channel 350V 72mA (Tj) 360mW (Ta) Surface Mount ...
DataSheet:	DN3135K1-G Datasheet/PDF
Quantity:	1000

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Specifications

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	350V
Current - Continuous Drain (Id) @ 25°C:	72mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):	0V
Rds On (Max) @ Id, Vgs:	35 Ohm @ 150mA, 0V
Vgs(th) (Max) @ Id:	--
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	120pF @ 25V
FET Feature:	Depletion Mode
Power Dissipation (Max):	360mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3 (TO-236)
Package / Case:	TO-236-3, SC-59, SOT-23-3

Description

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<h2>Transistors - FETs, MOSFETs - Single</h2><p>DN3135K1-G FET is a type of metal oxide semiconductor field effect transistor (MOSFET). As a three-terminal device, it consists of a gate, drain and source. It is used in many applications and comes in various forms like surface-mount, single and dual and plastic packaged.</p><p>The DN3135K1-G FET has very low on-resistance, low input capacitance and a gate charge of only 3.2nC. This makes it suitable for use in power switching and amplifying circuits, high frequency operation and low voltage, low EMI/RFI applications. It is also capable of providing fast switching and stable operating performance.</p><p>The DN3135K1-G FET\'s application field includes power conversion, motor drives and instrumentation, where very low on-resistance and fast switching is desired. It can be used as a switch in power supplies, as a driver in inverters and as a controlled resistance in amplifiers. It can also be used in motor drives, as it can quickly switch voltage signals and adapt to high speed circuit applications.</p><p>In terms of working principle, a voltage applied to the gate controls the current flow from the source to drain. This voltage changes the characteristics of an electric field created at the interface between the metal oxide layer or gate oxide of the FET and the substrate. This electric field changes the conductance of the device, thus allowing the current flow to be controlled by the gate voltage.</p><p>The DN3135K1-G FET is constructed with three terminals, the source, gate and drain. Depending on the type of FET, the substrate can be either conductive or a semiconductor. As a MOSFET, it works on an oxidation layer that separates the gate from the substrate.</p><p>When a positive voltage is applied to the gate, the positive charges in the gate repel the electrons in the gateoxide and form a depletion region. This repels the electrons in the n-type substrate and forms an inversion layer at the interface between the gateoxide and the substrate. The inversion layer forms an electric potential barrier, which prevents the current flow from source to the drain.</p><p>However, when a negative voltage is applied to the gate, the negative charges in the gate draw in electrons from the gateoxide and form an inversion layer. This attracts the electrons from the n-type substrate and no electric potential barrier exists. The current from source to the drain can then freely flow.</p><p>In conclusion, the DN3135K1-G FET is a useful component for various applications. It has low on-resistance, low input capacitance, small gate charge and fast switching capabilities. The operation of the device is based on the principle of a voltage applied to the gate causing a change to the electric field created at the interface between the metal oxide layer or gate oxide of the FET and the substrate, thus controlling the current flow from the source to the drain.</p>

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