DN3135N8-G Discrete Semiconductor Products

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The DN3135N8-G FET transistor is a type of single power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It\'s designed to be used as an application field and working principle. This type of transistor is a voltage-controlled device that can be used to amplify and switch electronic signals efficiently. It can be used in a variety of applications such as audio amplifiers, audio crossover networks, power amplifiers, radio transmitters and automotive audio systems.

The DN3135N8-G FET transistor has a low on-state resistance of 8.25 ohms, a high input impedance of 375K ohms, a drain-source breakdown voltage of 20V and a continuous drain current of 4.5A. It also has a max drain-source voltage of 55V, a gate-source voltage of ±20V and a thermal resistance of 30°C/W. This makes it a great choice for power MOSFET applications that require high current switching.

When using the DN3135N8-G FET transistor in an application, it\'s important to be aware of the working principle of the device. The working principle of a FET works in a similar way as a bipolar transistor. It is composed of three terminals— Gate, Drain, and Source. The gate is analogous to the base of the bipolar transistor, and gate voltage (Vgs) controls the current flow from the drain to the source. When Vgs is higher than the threshold voltage of the FET (known as ‘threshold voltage’), it is said to be “on” and current starts to flow between the drain and source terminals. When Vgs is lower than the threshold voltage, the FET is said to be “off” and no current can flow between the drain and source.

In addition, the DN3135N8-G FET transistor has a ‘Cascode’ protection feature. Cascode is a type of protection circuit that helps protect the device in a situation when the gate voltage (Vgs) unintentionally exceeds the device’s ‘breakdown voltage’. The device contains a second FET transistor which is connected between the drain and source terminals, and when excess Vgs is applied this second FET transistor turns on and acts as a protection circuit, limiting the Vgs to a safer level.

The DN3135N8-G FET transistor can be used in a variety of applications such as, audio amplifiers, audio crossover networks, radio transmitters, automotive audio systems and power amplifiers. Compared to a BJT, the FET transistor has an increased current carrying capacity and lower on-state resistance, making it a more efficient device for switching and amplifying electrical signals. In addition, the device’s Cascode protection feature ensures that its gate voltage does not exceed the device’s breakdown voltage.

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