DN3535N8-G Discrete Semiconductor Products

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DN3535N8-G is a general purpose N-channel low side switch which is ideal for low power, low voltage applications. It has a logic-level over-voltage protection which makes it suitable for applications in DC motor control, power management and other applications that require power switching. It is manufactured in a small SOIC-8 package, making it suitable for applications where space is limited.

The DN3535N8-G has an eighth drain source breakdown (Vdss) of 25 V, making it ideal for applications where it is required to switch power at higher voltages. It has an on resistance (Ron) of 250 mΩ max., giving it the ability to switch power of up to 150 W. The maximum total gate charge (Qg) is 15 nC, making the switch suitable for high speed applications. The threshold voltage is 3.0 +/- 0.3 V, making it ideal for applications that require low power consumption.

The working principle of the DN3535N8-G is based on its FET device structure. It is an enhancement mode MOSFET, which means it relies on a gate-source voltage to switch on or off. When the gate-source voltage is applied, the current begins to flow from the source to the drain through the channel of the FET. The amount of current that will flow from source to the drain is determined by the resistance of the channel.

The DN3535N8-G is an ideal switch for low power, low voltage applications, due to its low Ron and Vdss ratings. It is suitable for high speed applications, due to its low Qg rating. It can be used in applications such as DC motor control, power management, and other applications that require power switching. It is also well suited for applications where space is limited, due to its small SOIC-8 package.

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