Name: DN3545N8-G Discrete Semiconductor Products
Brand: Microchip Technology
SKU: DN3545N8-GTR-ND
Price: 0.41 USD
Availability: InStock

DN3545N8-G Discrete Semiconductor Products
Allicdata Part #:	DN3545N8-GTR-ND
Manufacturer Part#:	DN3545N8-G
Price:	$ 0.41
Product Category:	Discrete Semiconductor Products
Manufacturer:	Microchip Technology
Short Description:	MOSFET N-CH 450V 0.2A SOT89-3
More Detail:	N-Channel 450V 200mA 1.6W (Ta) Surface Mount TO-24...
DataSheet:	DN3545N8-G Datasheet/PDF
Quantity:	10000

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Specifications

Vgs(th) (Max) @ Id:	--
Package / Case:	TO-243AA
Supplier Device Package:	TO-243AA (SOT-89)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.6W (Ta)
FET Feature:	Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds:	360pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	20 Ohm @ 150mA, 0V
Drive Voltage (Max Rds On, Min Rds On):	0V
Current - Continuous Drain (Id) @ 25°C:	200mA
Drain to Source Voltage (Vdss):	450V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Description

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DN3545N8-G application field and working principle

DN3545N8-G is a state-of-the-art Field-Effect Transistor (FET) designed by TOSHIBA. It has a wide range of applications and is primarily used in applications that require intense heat dissipation and minimal power consumption. In this article, we will discuss the application field and working principle of DN3545N8-G, so that you can understand how this remarkable device works.

The benefits of using a FET in any application are numerous. Firstly, they consume a minimum amount of power, making them ideal for applications requiring low power budgets. Secondly, their high switching speeds make them highly efficient for controlling current and voltage quickly and accurately, making them suitable for applications that require a fast response time and precision operation. Finally, since FETs are physically smaller than other transistors, they are perfect for applications where size and weight are an issue.

The specific application field of DN3545N8-G involves the control of current, voltage, and power. It is widely used in applications that involve power conversion, invertors, motor control, and linear regulators. These applications have a wide range of power requirements and DN3545N8-G can handle any of them with ease. Additionally, the FET can operate at temperatures as high as 175°C, making it suitable for a variety of industrial applications.

The working principle of DN3545N8-G relies on a concept known as “channel length modulation”. In this modulated form of FET operation, a thin layer of oxidized silicon is placed between two electrodes. This layer of insulator is ionized when current passes through it, creating a gap that modulates the flow of charge carriers. The modulation of this charge carrier flow is what allows DN3545N8-G to control the voltage and current of the application in a very precise manner.

To sum up, DN3545N8-G is a state-of-the-art FET device designed by TOSHIBA. It has a wide range of applications in power conversion, inverters, motor control, and linear regulators. Additionally, it is capable of operating at temperatures as high as 175°C, making it suitable for a variety of industrial applications. The working principle of DN3545N8-G is based on channel length modulation, a phenomenon in which a thin layer of oxidized silicon is ionized when current passes through it, creating a gap that modulates the flow of charge carriers. We hope that this article has given you a better understanding of DN3545N8-G’s application field and working principle.

The specific data is subject to PDF, and the above content is for reference

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