DRA3123E0L Discrete Semiconductor Products |
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Allicdata Part #: | DRA3123E0LTR-ND |
Manufacturer Part#: |
DRA3123E0L |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 100MW SSSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA3123E0L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
10000 +: | $ 0.04747 |
30000 +: | $ 0.04441 |
50000 +: | $ 0.04084 |
Resistor - Emitter Base (R2): | 2.2 kOhms |
Base Part Number: | DRA3123 |
Supplier Device Package: | SSSMini3-F2-B |
Package / Case: | SOT-723 |
Mounting Type: | Surface Mount |
Power - Max: | 100mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 6 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRA3123E0L is a single transistor, pre-biased for various applications such as linear regulation and power supplies. This transistor is designed with advanced technology to achieve high performance. It has a number of advantages and is widely used in commercial and industrial applications, including amplifiers and power supplies.
The DRA3123E0L has a single collector as its main function, while its base can be used to adjust the base current. The emitter of the device is connected to the emitter of the base, which results in a low voltage drop. This is beneficial because it helps reduce power losses and increases efficiency. Additionally, the transistor can be pre-biased with a resistor to set the base current, allowing for better control and flexibility.
The working principle of the DRA3123E0L is primarily based on the concept of negative feedback. When a signal is applied to the base of the device, the base current (Ib) is modified accordingly. This alteration results in a proportional change in the collector-emitter voltage (Vce). This is beneficial for a number of applications in which the collector current must remain constant despite fluctuations in the external environment.
For example, in linear regulators, the DRA3123E0L is often used to provide a stable voltage output. This is achieved by utilizing the negative feedback loop in which the base current is modulated to control the Vce. When the Vce rises, the base current is increased, thus reducing the Vce. Similarly, when the Vce drops, the base current is decreased, thus raising the Vce. This regulation allows for stable output voltages despite fluctuations in the external environment.
The DRA3123E0L is also well-suited for use in power supplies. In these applications, the negative feedback of the transistor is used to maintain a consistent output voltage. Typically, the desired output voltage is set by a voltage regulator circuit which is connected to the base of the transistor. Again, any changes in the external environment are sensed by the transistor, and the corresponding changes to the base current are used to maintain the desired output voltage.
In summary, the DRA3123E0L is a single collector, pre-biased transistor designed for various applications such as linear regulation and power supplies. Its working principle is based on the concept of negative feedback, and it is well-suited for use in applications where a constant voltage must be maintained despite fluctuations in the external environment. The device has a number of advantages, including reduced power losses and increased control and flexibility.
The specific data is subject to PDF, and the above content is for reference
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