DRA3123Y0L Allicdata Electronics

DRA3123Y0L Discrete Semiconductor Products

Allicdata Part #:

DRA3123Y0LTR-ND

Manufacturer Part#:

DRA3123Y0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DRA3123Y0L datasheetDRA3123Y0L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F2-B
Base Part Number: DRA3123
Description

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The DRA3123Y0L is a type of single, pre-biased transistor that falls under the category of bipolar junction transistors. It is a three-terminal device and has a wide range of applications in different industrial and commercial fields.

The main types of applications include amplification, switching, switching/rectifier, and analog-to-digital and digital-to-analog conversion. Apart from these functions, the DRA3123Y0L can also be utilized in high voltage circuit protection and electrostatic discharge (ESD) protection. Additionally, these are highly suitable for analog building blocks, motor control, HVAC, and entertainment systems.

In regards to its working principle, the DRA3123Y0L has two pn-junctions that are composed of different types of semiconductor materials. Both these junctions form the transistors basic structure. Two of the three terminals are known as the emitter and the collector and the third terminal is the base.

When a small amount of electricity is applied at the base, it becomes positively charged and current can now flow from the emitter to the collector. The current flow from the emitter to the collector is controlled by the amount of current in the base. This is the principle on which the DRA3123Y0L operates.

The DRA3123Y0L also has several advantages that make it suitable for a variety of applications. Firstly, the pre-bias mechanism makes the transistor easier to operate and control. This helps reduce the complexity of the design, making it more cost-effective. Secondly, the pre-bias stage improves the performance of the transistor, as the current gain is increased. Finally, since the pre-bias stage helps reduce the size of the transistors, the DRA3123Y0L can be used in several high-density applications such as digital-to-analog and analog-to-digital converters.

In conclusion, the DRA3123Y0L is a type of single, pre-biased transistor that offers several benefits in a variety of industrial and commercial applications. Its working principle is based on the two pn-junctions in the transistor and the pre-bias stage helps increase the current gain and reduce the complexity of the design. With its wide range of applications and advantages, the DRA3123Y0L is a suitable transistor for a variety of different applications.

The specific data is subject to PDF, and the above content is for reference

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