DRA3123Y0L Discrete Semiconductor Products |
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Allicdata Part #: | DRA3123Y0LTR-ND |
Manufacturer Part#: |
DRA3123Y0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 100MW SSSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA3123Y0L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | SSSMini3-F2-B |
Base Part Number: | DRA3123 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DRA3123Y0L is a type of single, pre-biased transistor that falls under the category of bipolar junction transistors. It is a three-terminal device and has a wide range of applications in different industrial and commercial fields.
The main types of applications include amplification, switching, switching/rectifier, and analog-to-digital and digital-to-analog conversion. Apart from these functions, the DRA3123Y0L can also be utilized in high voltage circuit protection and electrostatic discharge (ESD) protection. Additionally, these are highly suitable for analog building blocks, motor control, HVAC, and entertainment systems.
In regards to its working principle, the DRA3123Y0L has two pn-junctions that are composed of different types of semiconductor materials. Both these junctions form the transistors basic structure. Two of the three terminals are known as the emitter and the collector and the third terminal is the base.
When a small amount of electricity is applied at the base, it becomes positively charged and current can now flow from the emitter to the collector. The current flow from the emitter to the collector is controlled by the amount of current in the base. This is the principle on which the DRA3123Y0L operates.
The DRA3123Y0L also has several advantages that make it suitable for a variety of applications. Firstly, the pre-bias mechanism makes the transistor easier to operate and control. This helps reduce the complexity of the design, making it more cost-effective. Secondly, the pre-bias stage improves the performance of the transistor, as the current gain is increased. Finally, since the pre-bias stage helps reduce the size of the transistors, the DRA3123Y0L can be used in several high-density applications such as digital-to-analog and analog-to-digital converters.
In conclusion, the DRA3123Y0L is a type of single, pre-biased transistor that offers several benefits in a variety of industrial and commercial applications. Its working principle is based on the two pn-junctions in the transistor and the pre-bias stage helps increase the current gain and reduce the complexity of the design. With its wide range of applications and advantages, the DRA3123Y0L is a suitable transistor for a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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