Allicdata Part #: | DRC5114T0LTR-ND |
Manufacturer Part#: |
DRC5114T0L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DRC5114T0L Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04683 |
6000 +: | $ 0.04215 |
15000 +: | $ 0.03747 |
30000 +: | $ 0.03513 |
75000 +: | $ 0.03122 |
Resistor - Base (R1): | 10 kOhms |
Base Part Number: | DRC5114 |
Supplier Device Package: | SMini3-F2-B |
Package / Case: | SC-85 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Series: | -- |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRC5114T0L is a single, pre-biased pre-packaged transistor, a type of bipolar junction transistor (BJT). The DRC5114T0L is an NPN device with an integrated high-voltage bias voltage stabilizer. It is manufactured by Littel semiconductor, a well-known semiconductor manufacturer.
A bipolar junction transistor (BJT) is a three-terminal electrical device that uses two p-n junctions. The BJT has two types of current carriers: holes in the p-type material and electrons in the n-type material. These two types of current carriers can be used as current sources, amplifying or switching the current. The DRC5114T0L is a single, pre-biased BJT, which means that it has been pre-biased, reducing the need for external biasing components.
The DRC5114T0L is designed to provide a better gain than traditional BJTs. It uses a high-voltage bias voltage stabilizer which helps keep the voltage across the base-emitter junction relatively constant. This helps reduce the distortion generated by the commonly used resistive feedback, and also makes it suitable for high-frequency applications. Its wide bandwidth helps to reduce the effects of parasitic capacitances, which can lead to signal errors in high-frequency applications.
The DRC5114T0L can be used in a variety of applications from linear amplifiers to high-frequency switching circuits. It is also suitable for use in motor control, power control, and television applications. While its power dissipation is relatively low, it is still able to handle high current levels. This, combined with its excellent performance, makes it a reliable choice for many applications.
The working principle of the DRC5114T0L is similar to that of a regular BJT. The base is connected to a voltage source, and a current passes through the base-emitter junction. This current is then amplified by the current gain of the device, and the output current is greater than the input current. This phenomenon is known as current amplification. The DRC5114T0L is able to provide current gain up to 250, which helps to improve the signal to noise ratio of the output signal.
In conclusion, the DRC5114T0L is a single, pre-biased pre-packaged transistor which is versatile and reliable. It is a suitable choice for many applications from linear amplifiers to high-frequency switching circuits. Its integrated high-voltage bias voltage stabilizer helps to reduce distortion and makes it suitable for high-frequency applications, while its wide bandwidth helps to reduce parasitic capacitance effects. Its current gain of up to 250 helps to improve the signal to noise ratio of the output signal. All in all, the DRC5114T0L is a reliable and versatile device which is suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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