Allicdata Part #: | DRC5143Z0LTR-ND |
Manufacturer Part#: |
DRC5143Z0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DRC5143Z0L Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 47 kOhms |
Base Part Number: | DRC5143 |
Supplier Device Package: | SMini3-F2-B |
Package / Case: | SC-85 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRC5143Z0L is a single, pre-biased bipolar transistor system housing a bipolar junction transistor. It is used for general-purpose amplification and switching applications, including signal amplification for high speed switching applications and for pre-biased applications in which the junction-gate voltage is held constant by setting the collector-gate voltage externally. Additionally, it is suitable for protection-related applications in which the collector-gate voltage is held constant under a predetermined degree of junction-gate current.
The main applications of the DRC5143Z0L include signal buffering, level shifting, switching, signal voltage regulation, and power amplification. Its basic operations are based on controlling the current flowing between the collector and emitter terminals by controlling the voltage applied to the base terminal. As the device can easily be driven in a saturated condition, it is suitable for switching applications where high speed switching is required.
The working principle of the DRC5143Z0L relies on the fact that the current flowing between the collector and the emitter is affected by the voltage applied to the base. When the base voltage is applied, the base-emitter junction starts to conduct and the collector current starts to increase. As the current increases, it is further multiplied by the transistor\'s current gain, which is expressed as hFE. The gain of the transistor is determined by its characteristics – the current gain, the input resistance, and the output resistance. The characteristics of the device are also affected by temperature, and so the device must be operated within its rated range to ensure reliable operation.
The DRC5143Z0L is designed for pre-biased applications, where the junction-gate voltage is held constant by setting the collector-gate voltage externally. This is done to reduce the turn-on time of the device (which is proportional to the collector-gate voltage) by minimizing the time it takes for the device to start conducting current. The applications of the DRC5143Z0L in pre-biased applications include protection-related applications such as limiter circuits, overvoltage protection circuits, and current limiting circuits. This allows the device to be used as a protection element in a circuit as it is able to conduct current only when a specific voltage level is reached, thereby reducing the chances of damage to other components in the circuit.
In conclusion, the DRC5143Z0L is a single, pre-biased bipolar junction transistor system offering high speed switching, general-purpose amplification and switching, and protection-related applications. It is designed to operate on the principle of controlling the collector-emitter current by controlling the voltage applied to the base. Its characteristics, which include its current gain, input resistance, and output resistance, determine the gain of the device, which is further affected by temperature. Additionally, the device is designed for pre-biased applications, where the collector-gate voltage is set externally to reduce the turn-on time of the device.
The specific data is subject to PDF, and the above content is for reference
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