DRC5115T0L Allicdata Electronics

DRC5115T0L Discrete Semiconductor Products

Allicdata Part #:

DRC5115T0LTR-ND

Manufacturer Part#:

DRC5115T0L

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DRC5115T0L datasheetDRC5115T0L Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.04683
6000 +: $ 0.04215
15000 +: $ 0.03747
30000 +: $ 0.03513
75000 +: $ 0.03122
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Resistor - Base (R1): 100 kOhms
Base Part Number: DRC5115
Supplier Device Package: SMini3-F2-B
Package / Case: SC-85
Mounting Type: Surface Mount
Power - Max: 150mW
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Series: --
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DRC5115T0L is a single pre-biased NPN bipolar junction transistor commonly used in many electronics applications. It is frequently used in audio applications and is popular because of its high current capability, good linear stability, and low power consumption. It has a low noise level and good thermal stability, which makes it suitable for high precision applications. It is a popular choice for RF applications, such as modulators and amplifiers, as well as for motor control and step motor applications.

The DRC5115T0L is capable of high-speed switching and is designed for use in circuits requiring very low on-resistance. Its power dissipation of 1.2W makes it suitable for high-power circuits, while its high junction temperature of 150°C allows it to be used in temperature-sensitive circuits. It also offers a collector-to-base breakdown voltage of 40V, and a collector-to-emitter breakdown voltage of 20V. Its high current-gain cut-off frequency of 5MHz further adds to its suitability for high-speed switching applications.

The DRC5115T0L bipolar transistor has two distinct working principles, depending on how it is implemented in a circuit. Firstly, it can be used as a switch, with the collector-emitter voltage controlling the switch state. In this mode, the transistor acts as a current-controlled device, with the collector current changing in accordance with the base-emitter current. Secondly, the DRC5115T0L can be used as an amplifier, its amplification factor being determined by the collector-emitter voltage. This voltage is determined by the amount of current flowing from the base to the emitter, and the amount of current flowing from the collector to the emitter.

The DRC5115T0L bipolar transistor is widely used in many applications such as audio amplifiers, pre-amplifiers, linear circuits, switching signals and long regeneration circuits, phase-locked loops, power supplies, and power amplifiers. It is particularly popular in applications requiring low power consumption, such as portable devices and battery operated equipment. As such, it is increasingly being used in consumer electronics such as cell phones, tablets, and portable music players.

The DRC5115T0L bipolar transistor is an effective and reliable device for many electronic applications. Its low on-resistance, high collector-to-emitter breakdown voltage, and high junction temperature make it suitable for high-power circuits and temperature-sensitive circuits. Its two distinct working principles make it suitable for both switching and amplification applications. Its popularity across a range of applications makes it a reliable choice for designers and engineers.

The specific data is subject to PDF, and the above content is for reference

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