Allicdata Part #: | DRC5123E0LTR-ND |
Manufacturer Part#: |
DRC5123E0L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 100MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DRC5123E0L Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04683 |
6000 +: | $ 0.04215 |
15000 +: | $ 0.03747 |
30000 +: | $ 0.03513 |
75000 +: | $ 0.03122 |
Resistor - Emitter Base (R2): | 2.2 kOhms |
Base Part Number: | DRC5123 |
Supplier Device Package: | SMini3-F2-B |
Package / Case: | SC-85 |
Mounting Type: | Surface Mount |
Power - Max: | 100mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 6 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRC5123E0L is a pre-biased single Bipolar Junction Transistor (BJT) intended for use in industrial, commercial and automotive applications. It consists of two PN junctions connected in series, which form the base and emitter, and two internal resistors, which provide pre-biasing of the device. The device is manufactured using a bipolar process, and has a high level of reproducibility, high gain and low noise characteristics. It is also characterized by low on-resistance, low saturation voltage and low de-saturation time.
The DRC5123E0L is used in devices that require high output power, such as car amplifiers. It can be used to amplify the signal of audio headers and line level signals, and is suitable for audio modulators and Class D amplifiers. The DRC5123E0L has a high current gain and high power output, making it suitable for high current applications.
The working principle of DRC5123E0L is based on generating current in response to the voltage applied to its gate. The device consists of three terminals: the base, the collector and the emitter. When a voltage is applied to the base of the transistor, it creates a current between the collector and the emitter. This current flow is controlled by the resistance of the base-collector junction, which is also known as the depletion region. This current flow can be increased or decreased by changing the voltage applied to the base of the transistor. This is how the DRC5123E0L works alongside the other elements present in the electrical system to achieve amplification.
The DRC5123E0L is capable of drawing large currents and can be used in devices requiring large power output. It is also capable of driving inductive loads and can be used in appliances that require high voltage as well as constant current. Furthermore, the device is also well suited to applications that require low noise and low distortion, such as pre-amplifiers and low-noise amplifiers.
In summary, the DRC5123E0L is a pre-biased single bipolar junction transistor (BJT) intended for use in industrial, commercial and automotive applications. It offers high output power, low on-resistance, low saturation voltage and low de-saturation time, making it suitable for high power output applications that require low noise and low distortion. Its working principle is based on generating current in response to the voltage applied to its gate.
The specific data is subject to PDF, and the above content is for reference
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