DRC5144V0L Discrete Semiconductor Products |
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Allicdata Part #: | DRC5144V0LTR-ND |
Manufacturer Part#: |
DRC5144V0L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DRC5144V0L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04683 |
6000 +: | $ 0.04215 |
15000 +: | $ 0.03747 |
30000 +: | $ 0.03513 |
75000 +: | $ 0.03122 |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DRC5144 |
Supplier Device Package: | SMini3-F2-B |
Package / Case: | SC-85 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRC5144V0L is a single, pre-biased bipolar junction transistor (BJT) with an output frequency of up to 100kHz, a bandgap voltage of 0.6-1.2V and a transconductance of 40-160µmho. It can be used in applications such as power supplies, amplifiers, and DC-DC converters. This device is also compatible with standard integrated circuit processes.
The DRC5144V0L has three terminals, the collector, base, and emitter. It is constructed with a P-channel and an N-channel junction connected in series, forming an N-type structure. The collector and the base are connected together and form the p-type portion of the transistor, while the base and the emitter are connected together and form the n-type portion.
The DRC5144V0L has a forward biased transistor, which means it is usually biased for conduction when the base current is applied. This is done to reduce the need for additional current from the base terminal to obtain relatively large current gains from the collector. The amount of current gain is determined by the ratio of the current flowing from the collector to the base current. When the base current is increased, the current gain is also increased; the rate at which the current gain increases is known as the power gain (β).
The working principle of the DRC5144V0L involves its base-collector junction. When current is supplied to the base terminal, there will be an increase in voltage across the base-collector junction. This increase in voltage is necessary to allow the collector current to flow from the collector terminal to the base terminal. As the collector current is increased, the voltage developed across the base-collector junction decreases and a reverse current is generated that flows from the base terminal to the collector terminal. This reverse current helps to saturate the base-collector junction, which reduces the base-collector voltage drop and increases the current gain of the transistor.
The DRC5144V0L can be used in many applications, including power supplies, amplifiers, and DC-DC converters. It is used in power supplies because it provides excellent stability and allows for the efficient transfer of power. It is also used in amplifiers to provide higher gain and control over the frequency response of audio signals. In DC-DC converters, this device provides an efficient way to regulate the voltage and current levels of the device.
The DRC5144V0L is a versatile single, pre-biased bipolar junction transistor (BJT) with an output frequency of up to 100kHz and a transconductance of 40-160µmho. It is used in applications such as power supplies, amplifiers, and DC-DC converters due to its excellent stability, efficient power transfer, and high current gain. The device works by having a forward biased transistor, which increases the current gain when the base current is increased. Therefore, this type of transistor is an ideal choice for applications that require reliable operation, excellent stability, and efficient power transfer.
The specific data is subject to PDF, and the above content is for reference
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