DTC013ZUBTL Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	1 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	SC-85
Supplier Device Package:	UMT3F

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The DTC013ZUBTL is a single pre-biased NPN transistor die, developed for various applications. It is a junction type transistor that is offered in a plastic dual-in-line package. This device has a wide range of features and functionalities, making it an ideal choice for a variety of applications and use cases.The DTC013ZUBTL transistor is pre-biased for low current drive, which allows for a hassle-free integration into existing designs. This device consists of two separate electrical sections: the base and collector regions. The base region consists of two components – the emitter and base – while the collector region consists of three sections – the collector, base, and emitter. The transistor device is intended to be used with diodes and other components to form voltage controlled oscillators, switching circuits, and amplifiers.The base region of the DTC013ZUBTL is designed with a small geometry and a low saturation voltage, which leads to low input bias current and improved switching characteristics. The collector region is designed to provide optimal gain and excellent amplification properties. The DTC013ZUBTL transistor is also designed to have a low input and output capacitances, which leads to improved frequency response, faster switching times, and improved signal integrity.The DTC013ZUBTL is an ideal choice for use in a variety of applications such as data processing, power management, and industrial automation. It is especially suitable for power switching applications because of its excellent gain and excellent frequency response. The DTC013ZUBTL transistor also offers a high degree of accuracy in datasheet specifications, allowing for reliable voltage regulation.The DTC013ZUBTL is built with the most advanced semiconductor materials and processes. The silicon wafer design offers excellent thermal and electrical performance. The junction is designed to reduce power losses, while its dielectric insulation ensuresThat makes it an excellent choice for applications that require high accuracy and reliability. The DTC013ZUBTL transistor also has a low on-resistance, which helps minimize power consumption.The working principle of the DTC013ZUBTL transistor is simple and straightforward. When voltage is applied to the collector and base terminals, current flows between the collector and emitter terminal. As the current passes through the junction between the collector and base region, the voltage is measured at the collector, providing the necessary control of the transistor. The gains or amplification of the transistor is dependent on the current passing through the junction of the collector and base.The wide range of features, applications, and functionalities makes the DTC013ZUBTL transistor a great choice for designers and engineers looking for an easy to use device. Its low voltage and low current consumption, combined with excellent gain and frequency response, make it an ideal option for a wide range of applications. Engineers and designers can count on the accuracy of the datasheet specifications and its reliable voltage regulation capabilities, enabling hassle-free integration into existing systems.

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