DTC014YEBTL Allicdata Electronics
Allicdata Part #:

DTC014YEBTLTR-ND

Manufacturer Part#:

DTC014YEBTL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 50V 0.15W SC89
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC014YEBTL datasheetDTC014YEBTL Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

DTC014YEBTL transistors are single, pre-biased, bipolar junction transistors used in a wide range of applications. These transistors are pre-biased, meaning that the current flowing through them is already set, which allows for quick and easy setup in most applications. They provide high gain, low noise, and low power consumption, making them suitable for many applications.

A bipolar junction transistor (BJT) is a three-terminal electronic device consisting of two p-n junctions. The first junction is between a base and an emitter, while the second junction is between a collector and the emitter. The properties of BJTs, like their current amplification, are dependent on its geometry and construction, as well as the type of semiconductor material used. In the case of the DTC014YEBTL transistors, they are constructed using silicon. This material offers excellent current conduction, low thermal resistance, and high thermal endurance, allowing the circuit to adapt to increasing temperatures over time.

The most common uses for the DTC014YEBTL transistors are in high-speed switching applications. Their high gain, low power consumption, and small size make them an ideal choice for small circuits and computer hardware. The pre-biased feature also allows for fast setup in these applications, which can be critical for small circuits that need to process large amounts of data quickly. Additionally, these transistors are often used as level-shifters for analog-to-digital converters, as well as in logic circuits, timer circuits, and even motor control applications.

The working principle of the DTC014YEBTL is fairly straightforward. With the base-emitter junction in forward bias, a small base current is allowed to flow through the transistor. This current causes a larger collector current to flow through the collector-emitter junction. This collector current is determined by two factors: the current gain of the transistor (hfe), as well as the amount of base current. As the amount of base current increases, so too does the amount of collector current, and vice versa. Depending on the application, the collector current can be used to control the voltage on a load.

DTC014YEBTL transistors are widely used in many different electronics applications due to their pre-biased feature, small size, and high current gain. They are often used for high-speed switching applications, level-shifting in analog-to-digital converters, logic circuits, timer circuits, and for motor control. The working principle of these transistors is based on the idea that a small base current will cause a larger collector current to flow, which can then be used to control a load in the circuit.

The specific data is subject to PDF, and the above content is for reference

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