Allicdata Part #: | DTC044EMT2LTR-ND |
Manufacturer Part#: |
DTC044EMT2L |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 50V VMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC044EMT2L Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
8000 +: | $ 0.01985 |
16000 +: | $ 0.01687 |
24000 +: | $ 0.01588 |
56000 +: | $ 0.01489 |
200000 +: | $ 0.01323 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 30mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VMT3 |
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The DTC044EMT2L is a plastic-encased NPN bipolar junction transistor. It is commonly a single pre-biased transistors and it can be used in a variety of applications. This article will discuss the applications in which the DTC044EMT2L can be used as well as its working principle.
The DTC044EMT2L is best suited for use in low-noise amplification applications. This is because of its low-noise characteristics and its wide-range of common collector current gain. Additionally, the DTC044EMT2L\'s low collector-emitter saturation voltage makes it especially well-suited for use in digital applications such as switching circuits or amplifiers. Because the device is pre-biased, it can be directly connected to a DC power supply without the need for additional control circuitry. This makes the DTC044EMT2L an ideal choice for applications that require low-cost, low-power consumption.
The DTC044EMT2L\'s working principle can be broken down into four major steps. First, when a DC voltage is applied to the collector, electrons are injected from the emitter into the base material. Next, the electrons are "collected" by the collector and current flows through the circuit. Then, the electrons that reach the collector are swept away by the collector current and the base-collector junction begins to become reverse-biased, preventing further collector current. Lastly, when the base current reaches the cutoff current, the transistor is turned off and the circuit is again open-circuit.
To summarize, the DTC044EMT2L is a single pre-biased NPN bipolar junction transistor that is especially well-suited for low-noise amplification applications as well as digital switching and amplification circuits due to its low collector-emitter saturation voltage. Additionally, its working principle can be broken down into four major steps involving the injection of electrons from the emitter to the base material, the collection of electrons by the collector and the subsequent sweeping away of electrons, and the cutoff current that turns the transistor off.
The specific data is subject to PDF, and the above content is for reference
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