Allicdata Part #: | DTC014EMT2LTR-ND |
Manufacturer Part#: |
DTC014EMT2L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 50V VMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC014EMT2L Datasheet/PDF |
Quantity: | 8000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VMT3 |
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The DTC014EMT2L is a single, pre-biased bipolar junction transistor (BJT) integrated circuit. This type of transistor is designed to provide a high output current, fast switching speed and low power consumption. It is commonly used in a wide range of applications, such as motor control, power management and signal processing.
A bipolar junction transistor, or BJT, is a three terminal semiconductor device consisting of three layers of semiconductors - emitter, base and collector. This type of transistor works by amplifying the current that flows between its emitter, base and collector terminals. As the emitter to base voltage (Veb) increases, the current that flows between the emitter and the collector (Ic) increases. The amount of current that can be amplified depends on the level of current that flows into the base of the transistor (IB) and the ratio of the current gain hFE. When the current is amplified, the voltage across the collector and emitter (Vce) decreases.
The DTC014EMT2L provides an advantage for applications where high performance at fast switching speeds is a priority. It is designed to provide extremely high current ratings at high switching speeds and a low Vce saturation voltage for fast switching transitions. This allows for fast, real-time control of a motor or other device without the possibility of over-saturating the transistor. It is also designed to operate at low power consumption, while still providing the same high-quality signal.
The device is pre-biased at the time of manufacturing, which means the base-emitter junction is forward-biased to allow a current to flow through it even during initial operation. This allows for an easy, hassle-free start up procedure when setting up a circuit. Additionally, it ensures a larger current can be achieved with a much lower base current due to the forward biased design.
The DTC014EMT2L is an ideal choice for applications requiring high performance in motor control, power management, and signal processing. It offers fast switching speeds, low power consumption, low Vce saturation, and a pre-biased design for easy setup. It is a reliable and efficient device for applications that require high performance with quality signal output.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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