Allicdata Part #: | DTC015TUBTLTR-ND |
Manufacturer Part#: |
DTC015TUBTL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 50V UMT3F |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC015TUBTL Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | UMT3F |
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The DTC015TUBTL is a single pre-biased bipolar junction transistor (BJT) that is commonly used in various industrial and commercial applications to transfer and control signals in electrical circuits.
A BJT consists of two PN junction diodes, connected in series. It is an active device which amplifies an input signal by controlling the current flow between its emitter and collector regions. The DTC015TUBTL is a NPN type BJT, meaning the emitter and base regions are of P-type silicon and the collector region is of N-type silicon.
The DTC015TUBTL has three leads - the base (B), the collector (C) and the emitter (E) - connected directly to the respective terminals inside its integrated package. The base lead provides current to the base of the transistor, enabling the flow of current from the collector to the emitter. The collector lead is used to connect the transistor to the circuit’s load, while the emitter lead is used to provide a reference voltage for the collector current.
The transistor’s gain, β, is determined by the ratio of collector current, Ic to base current, Ib. This gain can be adjusted by increasing the amount of current sourced to the base of the transistor, which is known as “biased” in the electrical engineering field. Being a “pre-biased” type of BJT, the DTC015TUBTL already contains a resistive arrangement on its integrated package that produces the required emitter voltage to achieve the desired gain.
The DTC015TUBTL is commonly used in numerous industrial and commercial applications, including the transportation and manufacturing industries. Due to its small size, it is being increasingly used in portable and wearable devices such as smart watches, which require efficient control of power and signals without occupying too much space on the board. The DTC015TUBTL can also be used in audio amplifiers for its high sound fidelity, and in medical devices for diagnostic and therapeutic purposes.
To summarize, the DTC015TUBTL is a single pre-biased form of bipolar junction transistor (BJT). It has three terminals - base, collector and emitter - connected directly to the respective terminals inside its integrated package, and is commonly used in various industrial and commercial applications to amplify and transfer signals in electrical circuits. It is also being increasingly used in portable and wearable devices such as smartwatches, as well as audio and medical devices.
The specific data is subject to PDF, and the above content is for reference
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