Allicdata Part #: | DTC044EEBTLTR-ND |
Manufacturer Part#: |
DTC044EEBTL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 50V 0.15W SC89 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC044EEBTL Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 30mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | EMT3F (SOT-416FL) |
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The DTC044EEBTL belongs to the group of transistors known as Bipolar Junction Transistors (BJT), or commonly referred to as BJTs. They are semiconductor devices and are commonly used as active components in many electronic circuits.
The DTC044EEBTL is great for pre-biasing applications because it is a single transistor device. An advantage of a single transistor device is that it is more compact and efficient than other multi-transistor devices. It also requires less voltage, so it’s great for applications where power is limited.
DTC044EEBTL relies on a principle called an NPN transistor. An NPN transistor is a type of semiconductor device consisting of three layers of alternately and oppositely doped semiconductor materials. Its structure consists of a layer of p-type material sandwiched between two n-type material layers, which are referred to as base, collector and emitter layers. The NPN structure of the DTC044EEBTL allows current to flow through the circuit in one direction when a positive voltage is applied to the base.
Some of the applications for DTC044EEBTL include amplification, switching, and power supply. DTC044EEBTL is a great choice for amplification applications because it has high current gain, low saturation voltage, and great reliability. For switching applications, it has low “ON” voltage, so it is a good for controlling the flow of current. And it is great for power supply applications because it has low “OFF” leakage current, so it can efficiently control the flow of power.
The working principle behind DTC044EEBTL is that when the base is positively biased, electrons flow from the emitter to the collector while holes flow from the collector to the emitter. This creates an amplified version of the input signal. As the current through the emitter increases, the current through the collector also increases and this amplifies the input signal at the output.
In conclusion, the DTC044EEBTL is a single, pre-biased transistor that is great for applications where power is limited. It relies on an NPN structure and can be used for amplification, switching, and power supply applications. Its working principle is based on the fact that when the base is positively biased, current flows from the emitter to the collector which amplifies the input signal.
The specific data is subject to PDF, and the above content is for reference
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