DTC013ZMT2L Allicdata Electronics

DTC013ZMT2L Discrete Semiconductor Products

Allicdata Part #:

DTC013ZMT2LTR-ND

Manufacturer Part#:

DTC013ZMT2L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 0.15W VMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC013ZMT2L datasheetDTC013ZMT2L Datasheet/PDF
Quantity: 8000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 8000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3
Description

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DTC013ZMT2L is a single, pre-biased, bipolar junction transistor (BJT) designed for use in general purpose switching and amplification applications. It is manufactured by Toshiba Semiconductor Corporation, and is available in both SMD and through-hole packaging.

A BJT is a semiconductor device that has two P-N junctions. The junctions are formed by joining two different semiconductor materials together. In a BJT, one of the junctions is formed between the collector and base, while the other is formed between the emitter and base.

The DTC013ZMT2L features a high input impedance, low output impedance, and an excellent gain bandwidth product. It is a good choice for use in circuits that require good AC and DC performance with low current and voltage requirements.

In operation, a small base current is applied to the transistor, causing a much larger collector to emitter current to flow. This is known as the current gain, or β. The current gain of the DTC013ZMT2L is generally between 40 and 50.

The DTC013ZMT2L\'s pre-biased feature is an intrinsic part of its switching circuit. It is designed to be activated by an input voltage which is slightly higher than the voltage required to turn off the transistor. This prevents the transistor from being damaged due to overvoltage or undervoltage when it is being operated in either AC or DC applications.

The DTC013ZMT2L is notable for its ability to be used in a wide range of applications. Due to its exceptional switching speeds and low power dissipation, it can be used in audio and speech circuitry, interface circuits, and power circuits. It is also suitable for applications in digital telecommunications and RF devices, such as cell phones and wireless networks.

The DTC013ZMT2L is a good choice for general purpose switching and amplification applications. Its pre-biased feature makes it an ideal choice for DC and AC circuits, while its high input impedance and low output impedance yield excellent gain bandwidth performance. Additionally, its wide range of application fields make it suitable for a variety of applications, such as audio and speech circuitry, power circuits, and RF devices.

The specific data is subject to PDF, and the above content is for reference

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