DTC043TEBTL Allicdata Electronics

DTC043TEBTL Discrete Semiconductor Products

Allicdata Part #:

DTC043TEBTLTR-ND

Manufacturer Part#:

DTC043TEBTL

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 50V EMT3F
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC043TEBTL datasheetDTC043TEBTL Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
3000 +: $ 0.01855
6000 +: $ 0.01674
15000 +: $ 0.01455
30000 +: $ 0.01310
75000 +: $ 0.01164
150000 +: $ 0.00970
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Description

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The DTC043TEBTL is a single, pre-biased, bipolar junction transistor (BJT). It is home to the ever-changing landscape of modern technology, from automotive and industrial engineering applications to consumer electronics, computing, and even alternative energy solutions. This article will examine the details of the DTC043TEBTL, emphasizing its application field and working principle.

This transistor is specifically designed to provide enhanced system performance in power-supply circuits. Its capabilities range from providing low on-resistance to offering low input voltage requirements. This is due to its specification of a power supply voltage of 16V, which is much lower than the 18V typically seen in the power supply industry. This allows the device to handle greater amounts of load current.

The DTC043TEBTL features a single-stage configuration, with a P-channel MOSFET as the input, and a N-channel MOSFET as the output. This structure ensures an evenly balanced transfer of current through the two components. The two transistors are also connected via a biasing loop, making it possible for the input and output to be accurately regulated.

In terms of its practical application, the DTC043TEBTL provides advantages when used in power supplies. The low input voltage requirement and low on-resistance properties of the device allow it to be used as an effect supply switching system. It is also suitable for high-frequency operations and provides a higher efficiency than other switching systems. In addition, the DTC043TEBTL allows for smooth operation and reduced generation of di/dt spikes when used for power supply voltage regulation.

The operating principle of the device is based on a basic conversion of electrical power into usable energy. This conversion is achieved using a combination of a P-channel MOSFET as an input, and a N-channel MOSFET as an output. The P-channel MOSFET is responsible for driving the N-channel MOSFET, which in turn is responsible for regulating the output of the device.

The DTC043TEBTL features a Pre-Biased design, with a built-in bias resistor between the gate and the source of the device. This feature ensures that the device operates in its active region, allowing it to handle higher loads. The Pre-Biased design also offers improved linearity and temperature compensation, making the device suitable for use in precision applications.

The DTC043TEBTL is an efficient solution for power supplies, featuring superior thermal and electrical performance. Its Pre-Biased design offers improved linearity, temperature compensation, and current handling capabilities. The device is an effective supply switching system, offering low input voltage requirements and low on-resistance properties.

The specific data is subject to PDF, and the above content is for reference

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