DTC113ZKAT146 Allicdata Electronics
Allicdata Part #:

DTC113ZKAT146TR-ND

Manufacturer Part#:

DTC113ZKAT146

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 200MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC113ZKAT146 datasheetDTC113ZKAT146 Datasheet/PDF
Quantity: 30000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 30000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3
Base Part Number: DTC113
Description

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The DTC113ZKAT146 is a type of single, pre-biased transistor and is primarily used in the amplification and switching of electronic signals. It is a member of the bipolar junction transistor (BJT) family of transistors. By utilizing its three terminals -- collector, base, and emitter -- these transistors are used to convert a small electrical current into a larger one, providing amplification of an input signal.

A BJT works by using the injection of minority carriers (electrons or holes) across the base-emitter junction, with the electrons moving from the emitter to the base, and the holes moving from the base to the emitter. An externally applied voltage controls the number of electrons that can be injected across the emitter-base junction. This applied voltage is used to turn the transistor "on" or "off", so that it can be used for switching an electrical signal.

The DTC113ZKAT146 pre-biased transistor uses this technology to provide an amplified signal from a weak input signal. It is frequently used in the design of virtually any type of electronic device due to its versatility. A wide range of current gains (hfe) can be obtained from the DTC113ZKAT146, so it can be employed for many different applications. From low-level signal conditioning and switching circuits to high-power amplifier stages and switching circuits, the DTC113ZKAT146 can provide reliable signal amplification and signal switching.

The DTC113ZKAT146 is also well-suited for use in portable electronic devices. It has extremely low signal distortion, with the maximum distortion usually remaining below 4% under most conditions. Furthermore, its operating power is low, making it a good choice for battery-powered devices. The DTC113ZKAT146 is available in DIP and SOT-23 packages, allowing designers to use it in a variety of applications.

When using the DTC113ZKAT146, designers should note that it has a maximum operating temperature of 125 degrees Celsius and should not be used in environments where the temperature is above this level. In addition, its collector-base voltage should not exceed the maximum voltage rating of its package. As with any bipolar junction transistor, designers should take special care to limit the base current and prevent the transistor from being overdriven. If these precautions are taken, the DTC113ZKAT146 can provide reliable signal amplification and switching for applications in the most hostile environments.

The specific data is subject to PDF, and the above content is for reference

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