Allicdata Part #: | DTC114EEBTLTR-ND |
Manufacturer Part#: |
DTC114EEBTL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 150MW EMT3F |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC114EEBTL Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DTC114 |
Supplier Device Package: | EMT3F (SOT-416FL) |
Package / Case: | SC-89, SOT-490 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Series: | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 50mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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DTC114EEBTL is a single pre-biased NPN, Bipolar Junction Transistor (BJT) designed specifically to fit automotive applications. Primarily used in power circuits and drivers, these transistors feature a superior switching performance, low base current and low collector cut-off current, making it suitable for a variety of different applications in motor control, power switches and motor drivers.
The DTC114EEBTL is a low-power NPN transistor, with a Collector current of up to 1.3 A and a Collector-Emitter voltage of up to 50 V. It has a very high current gain (hFE) of up to 200, making it highly efficient and versatile when it comes to switching applications. It also features excellent thermal stability, ensuring reliable performance in long-term use. Additionally, this transistor also has a fast switching times, from less than 1ns in the case of Fall Time to greater than 10 ns in the case of Rise Time.
An important feature of the DTC114EEBTL is its pre-biased function. This allows the user to program the transistor in order to increase or reduce its base current accordingly. This feature is beneficial in that it allows the user to increase the gain of the transistor while still maintaining a low current draw. In addition, it prevents the transistor from driving itself into saturation, which can result in a significant reduction in performance.
In terms of its working principle, the DTC114EEBTL uses the same simple principle as any other BJT – collector current is controlled by its Collector-Base voltage. When a bias voltage is applied to its emitter, the transistor will start to conduct between the Collector and Emitter. However, the base current will determine how the Collector-Emitter current flows, and thus the gain of the transistor. The pre-biased function of the DTC114EEBTL allows the user to achieve higher current gains, with lower base current.
DTC114EEBTLs are used in many automotive applications, such as ECU, ABS systems, valve drive circuits and electric vehicle power converters. Due to its low power draw, pre-biased function and thermal stability, these transistors are ideal for applications with space and energy constraints. They can also be used in motor control, switch applications and motor drivers, providing reliable, cost-effective performance in a variety of different situations.
The DTC114EEBTL is a versatile, pre-biased NPN Bipolar Junction Transistor that is suitable for a variety of different applications. By controlling the base current and adjusting the Collector-Base voltage accordingly, the user can achieve high current gains with low power consumption. This makes these transistors highly efficient in use and ideal for automotive applications, providing reliable performance in motor control, switch applications and motor drivers.
The specific data is subject to PDF, and the above content is for reference
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