DTC144GKAT146 Allicdata Electronics
Allicdata Part #:

DTC144GKAT146TR-ND

Manufacturer Part#:

DTC144GKAT146

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 200MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC144GKAT146 datasheetDTC144GKAT146 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.02193
6000 +: $ 0.01978
15000 +: $ 0.01720
30000 +: $ 0.01548
75000 +: $ 0.01376
150000 +: $ 0.01147
Stock 1000Can Ship Immediately
$ 0.02
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Base Part Number: DTC144
Supplier Device Package: SMT3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DTC144GKAT146 is a pre-biased single bipolar junction transistor (BJT). It is an N-Channel lateral field effect transistor that is suitable for use in switching, amplification and general purpose applications. It is designed to be used in a wide variety of applications, ranging from consumer electronics to industrial and automotive applications.

The main characteristics of the DTC144GKAT146 include its ability to deliver a high speed switching of up to 5MHz, a low operating power of 5mW, with a current rating of 1.2A and a large input capacitance of 12pF. It also has small size, which makes it a perfect choice for space saving designs.

The DTC144GKAT146 works by controlling the current flow in between the base and the collector. It is made up of the base and collector electrodes, which are separated by a very thin semiconductor material known as the base region. This region is responsible for the current flow between the two electrodes. By changing the current in the base region, the collector voltage will also be changed.

The base voltage is usually pre-biased, which means that it is set at a certain predetermined level, to ensure a consistent current flow. This type of pre-bias is typically used in switching applications, where a fixed voltage level is needed to ensure the same current flow. It is also used in amplifier applications, where it is necessary to have a fixed voltage for the field effect transistors (FETs) to produce a fixed gain.

The other important characteristic of the DTC144GKAT146 is its low offset voltage. This feature ensures that the transistor will not operate in an inconsistent way, as the current flow in between the two electrodes is kept at a constant level. It also ensures that the transistor will not be overdriven, thus providing a stable performance. This feature is especially important when used in amplifier circuits, as it helps prevent distortion or clipping of the signal.

In addition to its excellent characteristics, the DTC144GKAT146 is easy to use and maintain. It can be easily interfaced with other components in a circuit and is compatible with most modern semiconductor fabrication process.

The DTC144GKAT146 is an excellent choice for a wide variety of applications, from consumer electronics to industrial and automotive applications. It is highly reliable, provides excellent performance and low power consumption. It is also a cost effective solution for space saving designs.

The specific data is subject to PDF, and the above content is for reference

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