DTC123EET1 Allicdata Electronics
Allicdata Part #:

DTC123EET1-ND

Manufacturer Part#:

DTC123EET1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 200MW SC75
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC123EET1 datasheetDTC123EET1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416
Base Part Number: DTC123
Description

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The DTC123EEt1 is a high-performance, single-prebiased bipolar transistor manufactured by Diodes Incorporated. It is commonly used for high-frequency switching and amplification applications. The DTC123EEt1 has a wide range of features that make it a versatile and reliable solution for many applications.

The DTC123EEt1 is a type of single-prebiased bipolar transistor, which means that it is already biased to start operating when powered on. This simplifies the design and assembly process, since no additional adjustments or wiring is necessary to get the device working. As with all other transistors, the main purpose of the DTC123EEt1 is to amplify or switch an input signal.

The DTC123EEt1 has a high current gain of 60 (hFE) and a high collector-emitter voltage of 20V. This makes it ideal for audio amplification and high-frequency switching applications. Its low power consumption of 3mW and low voltage drop of 0.8V make it a good choice for battery-powered devices. It also has a wide operating temperature range from -55°C to +150°C, making it suitable for a wide range of environments.

In terms of its working principle, the DTC123EEt1 is a three-layer device made up of a base, an emitter, and a collector. The base is responsible for controlling the current flow between the collector and the emitter, while the emitter and the collector are responsible for the power output. When power is applied, the device enters an "on" state and current flows from the base to the emitter and from the emitter to the collector. The transistor amplifies the input signal by allowing a larger current to flow through the collector and emitter under the same voltage drop. This is how the DTC123EEt1 is able to amplify or switch a low-powered input signal.

The DTC123EEt1 is a versatile and reliable single-prebiased transistor that can be used in a wide range of applications, including audio amplification and high-frequency switching. Its low power consumption and wide operating temperature range make it a good choice for many projects. It is a straightforward device to use with no additional wiring or adjustments required. For these reasons, the DTC123EEt1 is a popular choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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