DTC114EETL Allicdata Electronics

DTC114EETL Discrete Semiconductor Products

Allicdata Part #:

DTC114EETLTR-ND

Manufacturer Part#:

DTC114EETL

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 150MW EMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC114EETL datasheetDTC114EETL Datasheet/PDF
Quantity: 9000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 0.04000
10 +: $ 0.03880
100 +: $ 0.03800
1000 +: $ 0.03720
10000 +: $ 0.03600
Stock 9000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3
Base Part Number: DTC114
Description

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The DTC114EETL is a type of transistor, more specifically, a single pre-biased Bipolar Junction Transistor (BJT). It is a type of semiconductor component that is used for a wide range of purposes, mostly for switching and amplification of electrical signals.

The DTC114EETL can be used in a variety of applications, from automatic control systems to audio amplification, from voltage and current regulation to lighting control. This transistor operates in an environment of high voltage power supplies and current loads, exceeding the power requirements of many other types of transistors.

The working principle of the DTC114EETL is based on the current flowing through the collector-base junction and the voltage applied between the base and the emitter. When the voltage at the emitter changes, the current flow through the collector-base junction changes, allowing the voltage to be controlled by the circuit.

The transistor also acts as a switch and can be used to control sources of electricity. When a current is applied to the base of the transistor, the emitter current is increased and the voltage at the emitter increases. This results in the current flowing through the collector-base junction becoming greater, allowing the transistor to act as a switch.

When the current at the base is removed, the voltage at the emitter decreases, causing the current through the collector-base junction to decrease and thus the transistor to switch off. This is why transistors are often used as switches in high voltage applications.

The DTC114EETL is also used in high power amplifiers, as it provides excellent linearity and distortion characteristics. The transistor has a high unity gain frequency and low signal noise, making it suitable for the use in such applications.

In summary, the DTC114EETL is a type of single pre-biased Bipolar Junction Transistor (BJT) that is used for a wide range of applications, primarily as a switch and amplifier. It operates in an environment of high voltage power supplies and current loads and can be used in high power amplifiers. It provides excellent linearity and distortion characteristics and has a high unity gain frequency and low signal noise.

The specific data is subject to PDF, and the above content is for reference

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