| Allicdata Part #: | DTC114EUAT106TR-ND |
| Manufacturer Part#: |
DTC114EUAT106 |
| Price: | $ 0.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | TRANS PREBIAS NPN 200MW UMT3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: | DTC114EUAT106 Datasheet/PDF |
| Quantity: | 69000 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| 1 +: | $ 0.02000 |
| 10 +: | $ 0.01940 |
| 100 +: | $ 0.01900 |
| 1000 +: | $ 0.01860 |
| 10000 +: | $ 0.01800 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
| Moisture Sensitivity Level (MSL): | -- |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 10 kOhms |
| Resistor - Emitter Base (R2): | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | 250MHz |
| Power - Max: | 200mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | UMT3 |
| Base Part Number: | DTC114 |
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The DTC114EUAT106 is a pre-biased single bipolar junction transistor (BJT) designed for general purpose application. It is capable of driving and controlling small signal digital and analog signals such as high-speed switching and other applications that require precision current control.
The DTC114EUAT106 features common base design with complementary NPN and PNP transistors. It is designed to reduce switching losses and minimize EMI due to its minimal on-state and off-state power losses. The device is constructed on an advanced silicon carbide substrate and housed in a hermetic leadless, half-brick package with a maximum height of 3.96 mm.
The main characteristics of this device include low collector-to-emitter breakdown voltage, low saturation voltage, low gate drive voltage, low operating temperature and good ESD protection. It also offers good yield, long-term reliability and superior mechanical and thermal stability.
The working principle of the DTC114EUAT106 is based on its common base design, whereby a base-collector junction will be created. This junction acts as a semi-conductor which allows current to flow between the two terminals. When a voltage is applied to the base-collector junction, it allows current to flow through the transistor. This current flow is controlled by the voltage applied to the base terminal, so the voltage to the base terminal can be varied to control the current flowing through the transistor.
The DTC114EUAT106 is suitable for a wide range of applications. It can be used for many general purposes such as high-speed switching, interconnects and signal conditioning. Additionally, it can be used as an amplifier in a number of circuits such as audio, RF and RFID applications.
The device is also ideal for power management applications such as DC-DC converters, motor drives, switched-mode power supplies, and power over Ethernet. In addition, it is used in many consumer electronics and industrial control applications. Its pre-biased design eliminates the need for an external biasing circuit, making it an attractive choice for a wide array of applications.
The DTC114EUAT106 offers an excellent performance in terms of stability and reliability. Its superior thermal and mechanical stability, high frequency response and low power requirement make it an excellent choice for demanding applications. The device is very reliable, with an expected life of up to 10 million hours.
The specific data is subject to PDF, and the above content is for reference
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DTC114EUAT106 Datasheet/PDF