DTC114EUAT106 Allicdata Electronics
Allicdata Part #:

DTC114EUAT106TR-ND

Manufacturer Part#:

DTC114EUAT106

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 200MW UMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC114EUAT106 datasheetDTC114EUAT106 Datasheet/PDF
Quantity: 69000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 0.02000
10 +: $ 0.01940
100 +: $ 0.01900
1000 +: $ 0.01860
10000 +: $ 0.01800
Stock 69000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3
Base Part Number: DTC114
Description

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The DTC114EUAT106 is a pre-biased single bipolar junction transistor (BJT) designed for general purpose application. It is capable of driving and controlling small signal digital and analog signals such as high-speed switching and other applications that require precision current control.

The DTC114EUAT106 features common base design with complementary NPN and PNP transistors. It is designed to reduce switching losses and minimize EMI due to its minimal on-state and off-state power losses. The device is constructed on an advanced silicon carbide substrate and housed in a hermetic leadless, half-brick package with a maximum height of 3.96 mm.

The main characteristics of this device include low collector-to-emitter breakdown voltage, low saturation voltage, low gate drive voltage, low operating temperature and good ESD protection. It also offers good yield, long-term reliability and superior mechanical and thermal stability.

The working principle of the DTC114EUAT106 is based on its common base design, whereby a base-collector junction will be created. This junction acts as a semi-conductor which allows current to flow between the two terminals. When a voltage is applied to the base-collector junction, it allows current to flow through the transistor. This current flow is controlled by the voltage applied to the base terminal, so the voltage to the base terminal can be varied to control the current flowing through the transistor.

The DTC114EUAT106 is suitable for a wide range of applications. It can be used for many general purposes such as high-speed switching, interconnects and signal conditioning. Additionally, it can be used as an amplifier in a number of circuits such as audio, RF and RFID applications.

The device is also ideal for power management applications such as DC-DC converters, motor drives, switched-mode power supplies, and power over Ethernet. In addition, it is used in many consumer electronics and industrial control applications. Its pre-biased design eliminates the need for an external biasing circuit, making it an attractive choice for a wide array of applications.

The DTC114EUAT106 offers an excellent performance in terms of stability and reliability. Its superior thermal and mechanical stability, high frequency response and low power requirement make it an excellent choice for demanding applications. The device is very reliable, with an expected life of up to 10 million hours.

The specific data is subject to PDF, and the above content is for reference

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