DTC114YET1 Allicdata Electronics
Allicdata Part #:

DTC114YET1OS-ND

Manufacturer Part#:

DTC114YET1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 200MW SC75
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC114YET1 datasheetDTC114YET1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416
Base Part Number: DTC114
Description

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TheDTC114YET1 is a small signal transistor that is part of a family of Bipolar Junction Transistors (BJT) known as a Single, Pre-Biased type. Bipolar junction transistors are three-terminal semiconductor devices that are designed to permit current control between two circuit nodes. Their construction consists of two pn-junctions that are connected together and form a base-collector-emitter structure. Generally, BJTs are used as amplifiers or switches; however, the DTC114YET1 is designed specifically for low-frequency amplifier applications.

The DTC114YET1 has a characteristic collector-emitter voltage rating of 120 Volt (Vce). This is a measure of its ability to withstand the voltage drop between the collector and the emitter. The collector-base voltage (Vcb) rating is 200V. N-channel devices, on the other hand, have a slightly higher voltage rating of 250V. This makes them more suitable for higher voltages.

The DTC114YET1 is pre-biased, meaning that it does not require any additional biasing components. This makes the component cheaper and easier to use in applications such as audio amplifiers, where the device can provide excellent amplification capabilities without the need for a bias network. The device also features a low noise figure, low distortion, and good current gain characteristics, making it well-suited for use in low-frequency audio amplifier and oscillator applications.

The working principle of the DTC114YET1 is based on controlling the current flow through the base. The transistor has three terminals, the emitter (E), the base (B) and the collector (C). When the base-to-emitter voltage (VBE) is increased, the current flow through the base increases, which in turn increases the current flow through the collector (Ic) and the collector voltage (Vce). By controlling the base current, the DTC114YET1 can be used as an amplifier or a switch.

In its use as an amplifier, the DTC114YET1 typically operates in the “linear” region, meaning that its gain increases as the input voltage increases. This is known as the direct-coupled amplifier configuration and is commonly used in audio amplifiers. As the input signal increases, the gain increases and the output voltage is amplified.

In its use as a switch, the DTC114YET1 operates in the “saturation” region, meaning that its gain decreases as the input voltage increases. This configuration is commonly used in logic circuits as well as in amplifying circuits to provide gain control. The DTC114YET1 is able to switch rapidly between the two states by controlling the base current.

The DTC114YET1 is an incredibly versatile transistor and can be used in a wide variety of applications due its small signal characteristics, pre-biased operation, and excellent current gain characteristics. It is well suited for relatively low voltage and power applications, such as audio amplifiers, oscillators, and logic circuits.

The specific data is subject to PDF, and the above content is for reference

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