DTC114YMFHAT2L Discrete Semiconductor Products

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max):	100mA
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	--
Frequency - Transition:	250MHz
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	SOT-723
Supplier Device Package:	VMT3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

DTC114YMFHAT2L Transistors - Bipolar (BJT) - Single, Pre-BiasedDTC114YMFHAT2L is a single pre-biased bipolar junction transistor (BJT). The DTC114YMFHAT2L offers high performance in a variety of applications. It has low collector-emitter saturation (VCEsat) voltage, making it ideal for high current switching applications. The device comes pre-biased, meaning it is set up to provide a certain current gain (hFE) at a certain base current. This can help reduce or eliminate the need for additional external components for biasing. The DTC114YMFHAT2L is a lateral NPN transistor that is well-suited for power supply, battery management, and motor control applications. It also offers superior protection against latch-up, static discharge, and high temperature conditions. It features exceptionally low collector-emitter saturation voltage, high level of integration, and integrated electrostatics.Applications The DTC114YMFHAT2L bipolar junction transistor is suitable for high current switching applications in power supply, battery management, and motor control. Examples of applications are: • Power management systems • Smartphones • Digital cameras• Industrial automation • Power tools• Automotive battery management• Intelligent power switches• Communication systems• High side switches• Li-ion battery chargers • PLC • Air conditioners• LCD Monitors• PC Peripherals • TVs • Power Distribution Units• Medical Devices• Hybrids • Power Amplifiers • Set-top BoxesWorking Principle The DTC114YMFHAT2L is a high power NPN transistor designed for a variety of applications. The device is based upon the classic BJT architecture and consists of a N-base and P-emitter region. When a voltage is applied between the base and emitter, the resulting current flow is regulated by the transistor’s current gain (hFE). The power dissipation of the device is related to the amount of current flowing and the voltage drop at the collector and emitter. The performance of the DTC114YMFHAT2L can be changed by adjusting the base-emitter bias current, which is the primary control over the device’s current gain (hFE). As the base-emitter bias current increases, the current gain increases as well. Alternatively, decreasing the base-emitter bias current can reduce the current gain. This can be used to fine tune the device for different applications. In summary, the DTC114YMFHAT2L is a single pre-biased bipolar junction transistor designed for a wide variety of applications. It is designed to provide a certain current gain at a certain base current, making it ideal for high current switching applications. It has several advantages, such as low collector-emitter saturation voltage, high level of integration, and integrated electrostatics. Its performance can be adjusted by adjusting the base-emitter bias current.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description