DTC123YKAT146 Allicdata Electronics
Allicdata Part #:

DTC123YKAT146TR-ND

Manufacturer Part#:

DTC123YKAT146

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 200MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC123YKAT146 datasheetDTC123YKAT146 Datasheet/PDF
Quantity: 3000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3
Base Part Number: DTC123
Description

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Transistors – Bipolar (BJT) – Single, Pre-Biased – DTC123YKAT146 are the latest generation of transistors that are manufactured using the latest technology. The DTC123YKAT146 are designed to be used in applications that require high performance and reliability.

This type of transistor is primarily used for amplification and switching applications, where the high current gain makes them very advantageous. They are also used in applications such as logic circuits, audio amplifiers and rectifiers.

The DTC123YKAT146 has an integrated bias voltage of 6V, which is higher than the average complementary metal-oxide semiconductor (CMOS) transistor. This makes it an ideal choice for high switching applications, as the higher input bias voltage allows the transistor to be switched off more easily.

The DTC123YKAT146 also has an integrated protective diode to help protect the transistor from excessive power consumption. This helps to reduce the amount of power that is drawn when the transistor is switched on and off.

The DTC123YKAT146 is a single-sided device, meaning that all components are located on one side of the wafer. This reduces the complexity of the overall package layout, as well as saving space.

The DTC123YKAT146 is designed to be used in high frequency applications, such as radio frequency (RF) or television. It has a high frequency range, meaning that it can be used in applications such as radio frequency amplifiers, high frequency switching and high frequency rectifiers.

The working principle of the DTC123YKAT146 is based on a bipolar junction transistor (BJT). The BJT is a three-terminal active semiconductor device, consisting of two p-n junctions connected back-to-back. It functions as a current-controlled current source, which means that it allows current to flow between two terminals (the base and collector) when the third terminal (the emitter) is held at a certain voltage.

The DTC123YKAT146 has a high current gain, and this is accomplished by the PN junctions within the transistor. The current gain of a transistor is calculated by taking the current that flows through the collector (Ic) divided by the current that flows into the base (Ib). A higher value of Ic/Ib results in a greater current gain.

The DTC123YKAT146 has a low noise figure, meaning that it can be used in applications such as audio amplifiers, where noise needs to be kept to a minimum. It also has a low saturation voltage, which means that it can be used in low voltage applications.

Lastly, the DTC123YKAT146 can be used in applications where reverse-voltage protection is required, as it has few reverse-biased gate-emitter junctions which prevents excessive current from damaging the device.

The DTC123YKAT146 is a versatile device that can be used in a variety of applications, from logic circuits to audio amplifiers. Its high performance, low noise figure and low saturation voltage make it an ideal choice for high frequency applications.

The specific data is subject to PDF, and the above content is for reference

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