DTC124EET1G

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	SC-75, SOT-416
Base Part Number:	DTC124

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The DTC124EET1G is a single, pre-biased bipolar junction transistor (BJT). It is a preferred semiconductor device for lower power applications, as it provides a higher power efficiency than other power transistors. The DTC124EET1G is also ideal for use in voltage switch, amplifier, and switching power supply applications. The DTC124EET1G is a double-diffused MOS transistor, providing both low power loss and high gain values. The DTC124EET1G\'s collector has a voltage rating of 100V, and it has a maximum collector current of 800mA. The maximum power dissipation of the transistor is 500mW. It is sold in a SOT-89 package. The working principle of the DTC124EET1G is simple. A base-emitter junction is formed by two semiconductor materials. When a voltage is applied to the base terminal, the current flows from the emitter to the collector and can be regulated by varying the voltage applied to the base terminal. This allows the transistor to turn on or off. The DTC124EET1G\'s pre-bias allows it to be used in the low voltage area where conventional transistors would not be suited. Its small size also makes it a great choice for small space applications. In addition, the DTC124EET1G is well suited for use in applications where short switching times are required, as it has a switching time of only 50ns. The DTC124EET1G is also a good choice for applications involving current switching. Its high gain value of 10 allows it to quickly switch currents with low power dissipation. For applications involving high power pulsing, the DTC124EET1G can be used as it has a low saturation voltage. The DTC124EET1G is used in a wide range of applications, including automotive, consumer, medical, and industrial. Its low power dissipation and fast switching time make it well suited for use in battery-powered devices, such as remote controls, cell phones, and digital cameras. Its high gain and low power dissipation make it a good choice for use in amplifiers and voltage switch applications. In conclusion, the DTC124EET1G is a single, pre-biased bipolar junction transistor. It is well suited for use in battery-powered devices and voltage switching applications, as it provides both low-power dissipation and high gain values. It is also a good choice for applications involving current switching and high power pulsing, as it has a low saturation voltage.

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