| Allicdata Part #: | DTC143EMFHAT2LTR-ND |
| Manufacturer Part#: |
DTC143EMFHAT2L |
| Price: | $ 0.03 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | NPN DIGITAL TRANSISTOR (CORRESPO |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: | DTC143EMFHAT2L Datasheet/PDF |
| Quantity: | 8000 |
| 8000 +: | $ 0.02381 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN - Pre-Biased + Diode |
| Current - Collector (Ic) (Max): | 100mA |
| Resistor - Base (R1): | 4.7 kOhms |
| Resistor - Emitter Base (R2): | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max): | -- |
| Frequency - Transition: | 250MHz |
| Power - Max: | 150mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-723 |
| Supplier Device Package: | VMT3 |
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DTC143EMFHAT2L is a transistor component manufactured by Diodes incorporated. It is classified as a single pre-biased transistor for the Bipolar (BJT) family. This component is designed for RF signal switching applications and as a multivibrator.
The DTC143EMFHAT2L transistor consists of a P-type substrate and a P-type collector layer that is connected to the base. The collector is connected to the source terminal, and the drain is connected to the emitter. The collector is then connected to the emitter through the emitter resistor. The emitter resistor differentiates the current flowing through the base and the collector, creating a base current limiting circuit.
The collector functions as the transistor\'s amplified output stage. When the base is excited, the collector will supply a current to the emitter as a result of the transistor\'s amplified output. Thus, the transistor can act as a signal amplifier through the use of the collector current.
The DTC143EMFHAT2L is a good choice for RF signal switching applications because of its low gate charge. Gate charge is the amount of current that flows through the gate. This low gate charge allows for high frequency signals to be switched quickly and accurately. The transistor\'s low gate charge also makes it suitable for use with AC signals.
The DTC143EMFHAT2L is also a suitable choice for use as a multivibrator. This is because the transistor behaves as a flip-flop that switches its output at the rate determined by the frequency of the excitation signal. This flipping action produces a rectangular waveform at the output, making the DTC143EMFHAT2L suitable for use in oscillators and time-based applications.
The DTC143EMFHAT2L is designed for RF switching and multivibrator applications. Its low gate charge allows for quick and accurate switching of high frequency signals, and its amplifier output makes it a suitable choice for many time-based applications. The versatility of the DTC143EMFHAT2L offers it great potential for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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DTC143EMFHAT2L Datasheet/PDF