DTC144EUBHZGTL Allicdata Electronics
Allicdata Part #:

DTC144EUBHZGTLTR-ND

Manufacturer Part#:

DTC144EUBHZGTL

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: NPN DIGITAL TRANSISTOR (WITH BUI
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC144EUBHZGTL datasheetDTC144EUBHZGTL Datasheet/PDF
Quantity: 3000
3000 +: $ 0.02024
Stock 3000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max): 100mA
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: UMT3F
Description

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The DTC144EUBHZGTL is a pre-biased, single bipolar junction transistor (BJT) that can be used for a variety of applications ranging from audio amplification to consumer electronics. It is capable of operating at temperatures up to 175°C, making it suitable for high temperature environments. The chip features low gate threshold voltage and gate-source capacitance, which enables it to operate at high frequencies. Its high breakdown voltage and low leakage current make it suitable for applications such as motor control, power switches, and display drivers.

A bipolar junction transistor (BJT) is a type of transistor consisting of two p-type and one n-type semiconductor materials. When base voltage is applied, electrons from the n-type material move to the p-type material, creating a current. This current can then be used to control the current flowing through the transistor, making it a useful device for amplifying signals or switching current in electronic circuits. The DTC144EUBHZGTL is a pre-biased BJT, meaning that it has a built-in voltage bias across its base and collector. This reduces the complexity of the circuit required to drive it, as the collector and base can both be connected to a voltage source. This also allows it to operate more efficiently and at higher frequencies than regular BJTs.

The DTC144EUBHZGTL is designed to operate at temperatures up to 175°C, making it suitable for automotive and radar applications. It features a low gate threshold voltage, which allows it to drive faster, and it has a low gate-source capacitance also. This will enable it to work at higher frequencies and with less noise, making it suitable for audio amplifiers and display drivers where low noise is essential.

The DTC144EUBHZGTL has a high breakdown voltage, enabling it to handle up to 30 V. This makes it suitable for motor control and power switches, as it can be used to switch high current and voltages. It is also capable of low leakage current which makes it ideal for battery operated devices as it will not draw power from the battery when the device is turned off. This will help to conserve battery life, making it a great choice for mobile and portable electronics.

In summary, the DTC144EUBHZGTL is a pre-biased, single bipolar junction transistor (BJT) that can be used for a variety of applications ranging from audio amplification to consumer electronics. It is designed to operate at temperatures up to 175°C and features a low gate threshold voltage and gate-source capacitance, allowing it to operate at higher frequencies. Its high breakdown voltage and low leakage current make it suitable for motor control, power switches, and display drivers. It also features low gate-source capacitance, making it suitable for audio amplifiers and other devices where low noise is essential.

The specific data is subject to PDF, and the above content is for reference

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