Allicdata Part #: | EDB130ABDBH-1D-F-D-ND |
Manufacturer Part#: |
EDB130ABDBH-1D-F-D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 1G PARALLEL 134VFBGA |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 1Gb (64M x 16, 32M... |
DataSheet: | EDB130ABDBH-1D-F-D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 1Gb (64M x 16, 32M x 32) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -30°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 134-VFBGA |
Supplier Device Package: | 134-VFBGA (10x11.5) |
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EDB130ABDBH-1D-F-D Application Field and Working Principle
Microelectromechanical system (MEMS) is the integration of the mechanical and electronic components, the EDB130ABDBH-1D-F-D is a low cost, precision MEMS device which can be used in a variety of applications, such as automotive, industrial, medical and general sensing.
Applications
The EDB130ABDBH-1D-F-D can be used in applications where precision, miniature size and low power are of importance, such as in automotive and industrial automation. These applications include, but are not limited to, pressure sensing,rate sensing and impact sensing. This device can be used to measure and react in a variety of challenging conditions, such as changes in ambient temperature and extreme pressure changes. In addition, its miniature size makes it a great fit for applications where high precision and small size are of great importance.
Working Principle
The EDB130ABDBH-1D-F-D has a built-in buffer capacitor to store energy which powers the MEMS device. This capacitor is constantly being charged, which then powers the MEMS. This actuation principle allows the device to retain its actuation force even if the power is lost. The device sends an induced electrical signal when pressure or rate is applied to its sensitive area, which is then picked up by the input amplifier and converted into a voltage or digital signal. The size of the induced electrical signal depends on the amount of pressure or rate applied to the sensitive area. This allows the device to measure and react to pressure changes or rate changes within a set range.
Conclusion
The EDB130ABDBH-1D-F-D is a miniature, low power, and cost-effective MEMS device which can be used in a variety of applications. It is used for measuring pressure and rate changes, and responding to them in a timely manner. This device can operate in challenging conditions, such as extreme temperature and pressure conditions. It is a great fit for applications where high precision, miniature size and low power are of great importance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EDB1332BDBH-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DAUT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB130ABDBH-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDPC-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DAAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DAUT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DAAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDPA-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 168WF... |
EDB1316BDBH-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDPC-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
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