EDB1316BDBH-1DAUT-F-R TR

The EDB1316BDBH-1DAUT-F-R TR is a type of memory which is widely used in various applications thanks to its reliability and advanced features. This type of memory is typically used for data storage, data protection, and device parameters. The EDB1316BDBH-1DAUT-F-R TR comes in a variety of capacities ranging from 8 KB, 32 KB, and 64 KB, with data rate speeds of 200 MHz (Zero Wait State Addressing). It has an organization of four planes per die of 112KB.

The EDB1316BDBH-1DAUT-F-R TR\'s main application fields are Industrial Memory, Embedded Memory, Automotive, Intelligent Displays, Set Top Boxes, and many more.

Working Principle

The EDB1316BDBH-1DAUT-F-R TR consists of a series of transistors, capacitors, and resistors, arranged in a specific pattern on a semiconductor substrate. The memory consists of a single data block, or array, of memory cells arranged in 16 lines by 1024 bits. Each cell contains a single bit, which can store either a 0 or 1. The contents of each cell can be changed by applying an appropriate electrical signal to it.

When the memory is read, an electrical signal is sent to each individual cell. This signal enables the cells to switch between 0s and 1s in response to the signal, effectively providing a way to read the stored data. When writing to the memory, a signal is sent through the memory cell, changing the stored bit. The signal is then removed and the memory cell retains its new data state.

The EDB1316BDBH-1DAUT-F-R TR is a reliable type of memory and is widely used in the aforementioned applications due to its strong performance and flexibility.