Allicdata Part #: | EDB1332BDBH-1DAAT-F-RTR-ND |
Manufacturer Part#: |
EDB1332BDBH-1DAAT-F-R TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 1G PARALLEL 134VFBGA |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 1Gb (32M x 32) Par... |
DataSheet: | EDB1332BDBH-1DAAT-F-R TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 1Gb (32M x 32) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 105°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 134-VFBGA |
Supplier Device Package: | 134-VFBGA (10x11.5) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is an important component of modern technology and the EDB1332BDBH-1DAAT-F-R TR is a model from this range. It is a state-of-the-art memory storage device and is commonly used in a variety of applications. This article takes an in-depth look at the EDB1332BDBH-1DAAT-F-R TR, focusing on its applications and working principle.
The EDB1332BDBH-1DAAT-F-R TR is a versatile memory device designed to handle the ever-increasing demands of the modern world. It is a reliable and efficient device that is commonly used in a variety of applications, ranging from consumer electronics to industrial machinery. It can be used to store data, programs, and even video and audio. In addition, the EDB1332BDBH-1DAAT-F-R TR is designed to be energy-efficient, making it an ideal choice for energy-conscious users.
The EDB1332BDBH-1DAAT-F-R TR has many applications in the consumer electronics industry. It is often used in digital cameras, smartphones, and digital video recorders. It can also be used in gaming consoles, media players, and other devices. Because of its high capacity, the EDB1332BDBH-1DAAT-F-R TR is also commonly used in enterprise storage systems, where it is used to store large amounts of data securely.
The EDB1332BDBH-1DAAT-F-R TR is also commonly used in industrial machinery. It is often used in industrial-grade robots and other devices that require a reliable memory storage device. It can also be used in medical equipment, such as MRI and CT scan machines. The EDB1332BDBH-1DAAT-F-R TR is designed to operate in extreme temperatures, making it an ideal choice for such applications.
The EDB1332BDBH-1DAAT-F-R TR works by storing data into memory cells. It is made up of multiple layers of transistors and capacitors. The transistors store data in terms of electrical signals, while the capacitors store the electrical signals and prevent any leakage, improving the device’s data retention. The EDB1332BDBH-1DAAT-F-R TR is capable of storing a large amount of data, allowing it to be used for a variety of applications.
The EDB1332BDBH-1DAAT-F-R TR also has an advanced power-saving feature, which reduces its power consumption. This feature helps to reduce the device’s energy costs, as well as its environmental impact. The device is also very durable, making it an ideal choice for applications where reliability is a must.
The EDB1332BDBH-1DAAT-F-R TR is a reliable and versatile memory storage device that can be used in a variety of applications. It has high capacity, power-saving features, and durability that make it an ideal choice for enterprise storage systems, consumer electronics, and industrial machinery.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EDB1332BDBH-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DAUT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB130ABDBH-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDPC-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DAAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DAUT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DAAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDPA-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 168WF... |
EDB1316BDBH-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDPC-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
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