Allicdata Part #: | EDB1332BDBH-1DAAT-F-D-ND |
Manufacturer Part#: |
EDB1332BDBH-1DAAT-F-D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 1G PARALLEL 134VFBGA |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 1Gb (32M x 32) Par... |
DataSheet: | EDB1332BDBH-1DAAT-F-D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 1Gb (32M x 32) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 105°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 134-VFBGA |
Supplier Device Package: | 134-VFBGA (10x11.5) |
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EDB1332BDBH-1DAAT-F-D Memory Application Field and Working Principle
EDB1332BDBH-1DAAT-F-D memory is a kind of non-volatile data storage device used as a modern memory technology device, as part of many electronic products, as well as computer operating systems, and other processes.
The EDB1332BDBH-1DAAT-F-D memory device is used for storing data and memories in many electronic and computer systems, and the device consists of semiconductor materials that are formed into an integrated circuit for storing data bits. This device can be found in a wide range of memory products such as RAM (Random Access Memory), ROM (Read Only Memory), DRAM (Dynamic Random Access Memory), SRAM (Static Random Access Memory) and Flash Memory.
The EDB1332BDBH-1DAAT-F-D memory chip is suitable for use in small, low-voltage devices such as calculators, PDAs, remote controls, and other handheld devices, as well as major data management systems such as servers, computers, and network systems. This type of memory chips can also be found in other electronic appliances like digital cameras and digital video players.
Working Principle of EDB1332BDBH-1DAAT-F-D Memory
The EDB1332BDBH-1DAAT-F-D memory operates on the principle of Electrical Derivatives and includes components such as transistor arrays, capacitors, resistors and capacitors. This device is used to store and retrieve data. To store data, a transistor array is used to create electrical charges on the transistor array. These electrical charges represent a bit of data, a 0 or a 1. This data is then stored on the chip.
To retrieve data, the data bit is read from the transistor array when it goes through a set of process to check if it’s a 0 or a 1. If the data bit is a 0, then it will be read as a 0; if it’s a 1, then it will be read as a 1. This data can then be used for further processing.
The EDB1332BDBH-1DAAT-F-D memory chip can store up to 2GB of data, which is quite a large amount of data for a single chip. It is also fairly fast as compared to other brands, and it has a long lifespan due to its non-volatility. This chip also utilizes an effective error checking system to ensure a high level of accuracy and reliability.
In conclusion, the EDB1332BDBH-1DAAT-F-D memory chip is a reliable, non-volatile memory device suitable for applications in many industries, such as data management and electronics. The device operates on the principle of Electrical Derivatives, and provides data storage and retrieval capabilities, up to 2GB of data, and error-checking system, as well as a long lifespan.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EDB1332BDBH-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DAUT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB130ABDBH-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDPC-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DAAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DAUT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DAAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDPA-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 168WF... |
EDB1316BDBH-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDPC-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
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