Allicdata Part #: | EDB1332BDBH-1DIT-F-RTR-ND |
Manufacturer Part#: |
EDB1332BDBH-1DIT-F-R TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 1G PARALLEL 134VFBGA |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 1Gb (32M x 32) Par... |
DataSheet: | EDB1332BDBH-1DIT-F-R TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 1Gb (32M x 32) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 134-VFBGA |
Supplier Device Package: | 134-VFBGA (10x11.5) |
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Memory: EDB1332BDBH-1DIT-F-R TR Application Field and Working Principle
The EDB1332BDBH-1DIT-F-R TR is a type of memory chip designed to store and recall data in digital form. It consists of a number of static random access memory (SRAM) cells, each cell capable of storing one bit of digital data. As such, the chip is capable of storing up to 32 kB of data.
The EDB1332BDBH-1DIT-F-R TR is used in a variety of computing applications including embedded systems, digital signal processing, graphics processing and networking. It is also used in some industrial automation equipment, PCB test equipment and other industrial electronics.
The EDB1332BDBH-1DIT-F-R TR operates on a 6T memory cell design, using six transistors per SRAM cell. It has an access time of 25 nanoseconds and runs on two power supply voltages – VCC1 (2.5 volts) and VCC2 (4.5 volts). The chip also supports two different write modes – synchronous and asynchronous. In synchronous mode, the SRAM can be written with a maximum frequency of 100 MHz, while in asynchronous mode the frequency is much lower at 10 MHz.
The EDB1332BDBH-1DIT-F-R TR is designed to be reliable, with a maximum retention time of 10 years, and offers low-power operation with a power dissipation of less than 500 mW. In addition, the chip also supports a number of environmental standards, including JEDEC and MIL-STD-883, as well as a wide-temperature range operation. It is also vibration and shock resistant.
The EDB1332BDBH-1DIT-F-R TR offers many advantages over other types of non-volatile memory such as NOR flash and EEPROM. It offers faster read and write speeds due to its SRAM cell design, as well as greater reliability and better low-power operation. Additionally, it is relatively inexpensive compared to other types of non-volatile memory, making it an attractive choice for many applications.
Conclusion
The EDB1332BDBH-1DIT-F-R TR is a type of memory chip designed for storing and recalling digital data. It operates on a 6T memory cell design, with an access time of 25 nanoseconds and two power supply voltages. The chip is used in a variety of computing applications, including embedded systems, digital signal processing and graphics processing. It also offers many advantages over other types of non-volatile memory, including faster read and write speeds, greater reliability and better low-power operation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EDB1332BDBH-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DAUT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB130ABDBH-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDPC-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DAAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DAUT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DAAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDPA-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 168WF... |
EDB1316BDBH-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDPC-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
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