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Memory

The EDB1316BDBH-1DIT-F-RTR is a random-access memory (RAM) integrated circuitmanufactured by Elpida Memory, Inc.

Application Field

The EDB1316BDBH-1DIT-F-RTR is designed to occupy a low-profile area of boards and can be operable in temperature ranges from -40 to +85 Celsius. This device is most suitable for DRAM, SRAM, and Data RAM bus applications where low-profile, high-speed and high-durability are all key requirements.

The EDB1316BDBH-1DIT-F-RTR provides up to 32 Gbit of memory capacity, making it suitable for embedding applications in the automotive, medical, communication, and other industries. Furthermore, the device provides a power-saving standby mode, which can significantly reduce the power consumption for dual-port SRAM applications.

Working Principle

The EDB1316BDBH-1DIT-F-RTR uses a standard 1.8V ± 10% power supply. Its dual-port SRAM works through the main controller, which enables concurrent access to both data and addresses. Therefore, port A and port B can read simultaneously and write independently of each other.

This device features two-way parity features and low-power standby mode. The two-way parity works in 8-bit burst and provides error correction data to the port A or port B. Furthermore, the low-power standby mode works in both ports and consumes about 20% less power than regular operating mode when it detects no activity in the data bus.

The EDB1316BDBH-1DIT-F-RTR provides a high speed access time of 8.5ns, making it faster than some other RAMs, including the EDB1316BDBH-1D, which has an access time of 14.5ns. Furthermore, the EDB1316BDBH-1DIT-F-RTR has a high-performance output buffer that allows for data to be read at speeds up to 100MHz.

In addition, the EDB1316BDBH-1DIT-F-RTR features on-chip data scrambling, which is designed to help recover data that has been lost due to signal degradation. This feature is particularly useful when transmitting data across noisy lines.

Conclusion

The EDB1316BDBH-1DIT-F-RTR is a random-access memory (RAM) integrated circuitmanufactured by Elpida Memory, Inc. It is designed for DRAM, SRAM, and Data RAM bus applications where low-profile, high-speed and high-durability are all key requirements. The device provides a power-saving standby mode, two-way parity features, and on-chip data scrambling for error correction. It also has a high speed access time of 8.5ns and an output buffer allowing for data to be read at speeds up to 100MHz. In addition, the device is operable in temperature ranges from -40 to +85 Celsius.

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