Allicdata Part #: | EDB1316BDBH-1DIT-F-D-ND |
Manufacturer Part#: |
EDB1316BDBH-1DIT-F-D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 1G PARALLEL 134VFBGA |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 1Gb (64M x 16) Par... |
DataSheet: | EDB1316BDBH-1DIT-F-D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 1Gb (64M x 16) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 134-VFBGA |
Supplier Device Package: | 134-VFBGA (10x11.5) |
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Memory - EDB1316BDBH-1DIT-F-D application field and working principle
EDB1316BDBH-1DIT-F-D, or ElectroDynamic Breakers with Busbar Holders, is a powerful and reliable form of protection in a wide range of industrial, telecommunications and medical applications. The device is designed to provide cost-effective and reliable power distribution in a variety of low-voltage and medium-voltage environments. It can be used both in single-phase and three-phase systems and also in applications with high system tensions. This article examines the application fields and working principle of the EDB1316BDBH-1DIT-F-D.
Applications of a Memory - EDB1316BDBH-1DIT-F-D
The EDB1316BDBH-1DIT-F-D can be used in a variety of applications, including: protection of critical electrical equipment, uninterrupted power supplies, industrial electrification and high-voltage applications. It is also suitable for use in medical, telecommunications, power generation and maritime applications.
The device is designed to provide robust, reliable and cost-effective protection to all types of power terminals and systems. It is commonly used in areas where a higher degree of protection is required and in high-voltage or potentially hazardous environments. The EDB1316BDBH-1DIT-F-D is available in a range of sizes and configurations, making it suitable for use in almost any application.
Working Principle of a Memory - EDB1316BDBH-1DIT-F-D
The EDB1316BDBH-1DIT-F-D works on the basis of electromagnetic field effects, which are generated and controlled by a small coil. When a voltage is applied to this coil, it creates an alternating magnetic field, which interacts with a metal core to create a powerful force which is then used to switch the power source on or off. This means that in the event of an overload or fault, the EDB1316BDBH-1DIT-F-D can switch off the power supply with almost instantaneous force, thereby protecting valuable equipment and preventing costly damage or worse.
The EDB1316BDBH-1DIT-F-D is able to detect low-level faults and overloads, allowing it to react quickly and minimize any damage to connected equipment. It also features a unique ‘load-on-die’ feature, which allows it to accurately measure the power consumption of the connected device and ensure that it is equipped with the necessary protection.
In addition, the EDB1316BDBH-1DIT-F-D is able to provide short-circuit protection and offers protection against high-voltage and neutral faults. The device also utilises traditional soft-starting circuits for automatically turning off over-current load, making it a much more reliable form of protection.
Conclusion
The EDB1316BDBH-1DIT-F-D is a reliable form of protection for a wide range of low-voltage and medium-voltage applications. It can be used to protect critical electrical equipment, uninterrupted power supplies, industrial electrification and high-voltage applications. It is designed to provide robust and cost-effective protection, while offering easy installation and a range of features to ensure reliable and effective power distribution.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EDB1316BDBH-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1316BDBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
EDB1332BDPC-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 134VF... |
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