Allicdata Part #: | EDFP112A3PB-GD-F-D-ND |
Manufacturer Part#: |
EDFP112A3PB-GD-F-D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 24G PARALLEL 800MHZ |
More Detail: | SDRAM - Mobile LPDDR3 Memory IC 24Gb (192M x 128) ... |
DataSheet: | EDFP112A3PB-GD-F-D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR3 |
Memory Size: | 24Gb (192M x 128) |
Clock Frequency: | 800MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -30°C ~ 85°C (TA) |
Description
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MemoryTechnology is constantly advancing and with this advancement comes new applications for electronic components such as memory devices. The EDFP112A3PB-GD-F-D is a FLASH memory device that can be used in many applications.The EDFP112A3PB-GD-F-D is a non-volatile memory device. This means that it does not require a power source in order to retain information. It is also very small and low power, making it ideal for use in portable electronic devices.The EDFP112A3PB-GD-F-D can be used in a variety of applications such as industrial computers, medical equipment, automotives, and military hardware. It is often used in tandem with a microcontroller, used to store the instructions the microcontroller is running. This makes it easy to upgrade the instructions stored in the memory device without having to reprogram the microcontroller.The EDFP112A3PB-GD-F-D also utilizes a few different operating modes so that it can be tailored to a variety of applications. These operating modes include Continuous Read/Write, Program/Erase, and Bank Erase.Continuous Read/Write mode is often used in applications that require the device to be constantly reading or writing data. This mode allows for extremely fast data retrieval or storage.Program/Erase mode is used for applications that require frequent program changes. This mode allows for program changes without the need for erasing the entire device.Bank Erase mode is used when it is necessary to erase large blocks of memory in order to re-program them. This makes it easier and faster to reprogram large amounts of memory.With its non-volatile memory, low power consumption, and operating modes, the EDFP112A3PB-GD-F-D is an ideal device for a variety of applications. It is a reliable, efficient, and cost-effective choice for anyone looking for a memory device.
The specific data is subject to PDF, and the above content is for reference
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EDFP112A3PF-GDTJ-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PF-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP112A3PF-JDTJ-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP164A3PB-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP164A3PB-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP164A3PD-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP164A3PD-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP164A3PD-MD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 1067... |
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EDFP112A3PB-GD-F-D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PB-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PB-JD-F-D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP112A3PB-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP112A3PB-GDTJ-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
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EDFP112A3PB-GD-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PB-JD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
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