EDFP112A3PB-JD-F-R

Series:	--
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR3
Memory Size:	24Gb (192M x 128)
Clock Frequency:	933MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.14 V ~ 1.95 V
Operating Temperature:	-30°C ~ 85°C (TA)

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Introduction to MemoryMemory is one of the most fundamental components of a computer system. It is an electronic component used to store data and information that can be accessed by a computer processor. Memory plays a crucial role in computing, as it facilitates the storage and retrieval of data. It is also used to provide high-speed access to application software and operating system components.In general, there are two main types of memories: volatile and non-volatile. Volatile memory is a type of memory that must be constantly powered in order to maintain its stored information. In comparison, non-volatile memory does not require a constant power source and can store data even when the power is off. The main categories of memory are ROM (read-only memory), PROM (programmable read-only memory), EPROM (erasable programmable read-only memory) and RAM (random access memory).EDFP112A3PB-JD-F-R Application Field and Working PrincipleThe EDFP112A3PB-JD-F-R is a non-volatile memory chip produced by EDF (Electronic Device Factory). It is a high-speed and low-power small outline dual in-line memory module (SO-DIMM) appropriately designed for automotive memory upgrade applications. This memory chip is particularly suitable for electronic devices that require flexible data storage and continuous process monitoring. The EDFP112A3PB-JD-F-R is based on 16M x 8 bits of non-volatile FRAM technology. It is comprised of an array of memory cells arranged in a way that allows information to be stored and retrieved in the memory. Each memory cell is composed of 8 transistors that are designed to store a single bit of data. This data can be read from or written to the memory cell by applying the appropriate voltages and signals.The EDFP112A3PB-JD-F-R chip provides high-speed access to data, as it can read and write data at rates up to 30MHz. Furthermore, it uses a low-power CMOS process, which makes it energy-efficient, and features a fast write cycle time of 15ns for each 8-bit word. In addition, it is designed with an enhanced refresh cycle, which makes it suitable for applications that require a continuous process monitoring function.In terms of applications, the EDFP112A3PB-JD-F-R is typically used in automotive memory upgrade solutions. Automobiles are increasingly equipped with systems that rely heavily on digital technology, such as advanced driver assistance systems (ADAS). The EDFP112A3PB-JD-F-R can be used in these systems to provide large amounts of data storage. Furthermore, its low power consumption and fast write speeds make it a viable option for applications that require fast, energy-efficient data storage and retrieval.ConclusionMemory is an important component of a computer system, as it facilitates the storage and retrieval of data. The EDFP112A3PB-JD-F-R is a non-volatile memory chip produced by EDF that is ideally suited for automotive memory upgrade applications. It uses 16M x 8 bits of non-volatile FRAM technology, and is able to read and write data at rates up to 30MHz. In addition, it is designed with an enhanced refresh cycle, which makes it suitable for applications that require a continuous process monitoring function. Moreover, its low-power CMOS process increases energy-efficiency, making it a viable option for applications that require fast, energy-efficient data storage and retrieval.

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