Allicdata Part #: | EDFP112A3PF-GD-F-D-ND |
Manufacturer Part#: |
EDFP112A3PF-GD-F-D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 24G PARALLEL 800MHZ |
More Detail: | SDRAM - Mobile LPDDR3 Memory IC 24Gb (192M x 128) ... |
DataSheet: | EDFP112A3PF-GD-F-D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR3 |
Memory Size: | 24Gb (192M x 128) |
Clock Frequency: | 800MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -30°C ~ 85°C (TA) |
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EDFP112A3PF-GD-F-D is a type of memory device which is found in many applications. It is a Non-Volatile Dual-Inline Memory Module (NVDIMM), and is used to store data in a computer’s memory. The basic idea behind the EDFP112A3PF-GD-F-D is to provide a high-speed, low-power way to transfer data to and from a computer’s main memory. In this article, we will discuss the application field and working principles of EDFP112A3PF-GD-F-D.The EDFP112A3PF-GD-F-D is most often found in enterprise servers and large data centers. It is used in applications where high-speed data access is critical, such as OLTP databases and mission-critical applications. The EDFP112A3PF-GD-F-D is also used in high-performance computing (HPC) systems to help accelerate computation times.The EDFP112A3PF-GD-F-D is composed of non-volatile memory chips and fast, low-power transistors. This allows it to store data even when there is no power, ensuring the system is not vulnerable to power outages or other faults. The EDFP112A3PF-GD-F-D also uses an intelligent controller to provide system-level status and alerting of any faults or errors.The working principles of the EDFP112A3PF-GD-F-D involve storing data in multiple memory banks, each of which can perform different operations. The device also utilizes a multi-layered architecture, which allows for multiple memory accesses in parallel. This architecture ensures that there is no bottleneck when accessing the data stored in the EDFP112A3PF-GD-F-D.When writing data to the EDFP112A3PF-GD-F-D, a write operation is performed. In this operation, the data is written to the given memory banks and the write operation is atomic. This means that the write operation is performed to completion with no interrupts or errors.When reading data from the EDFP112A3PF-GD-F-D, a read operation is performed. This operation is identical to the write operation, except the data is read from the given memory banks instead of being written.In order to ensure the data stored in the EDFP112A3PF-GD-F-D is safe and secure, the device also supports both error correction codes (ECC) and Cyclic Redundancy Checks (CRC). ECC is used to detect and correct single bit errors, while CRC is used to detect multiple bit errors.The EDFP112A3PF-GD-F-D also supports a variety of interconnect protocols, such as Non-Volatile Memory Express (NVMe). This allows for faster data rates when transferring data between devices. Additionally, the EDFP112A3PF-GD-F-D supports SMART management, which allows for better monitoring and improved reliability.Overall, the EDFP112A3PF-GD-F-D is a great choice for applications where high-speed data access is required. It stores data securely, supports both error correction and redundancy, and is fast and reliable. The EDFP112A3PF-GD-F-D is a great choice for any application where data transfer needs to be performed quickly and securely.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EDFP164A3PD-JD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP164A3PD-MD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 1067... |
EDFP112A3PB-GDTJ-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PB-JDTJ-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP112A3PD-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PF-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PF-GDTJ-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PF-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP112A3PF-JDTJ-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP164A3PB-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP164A3PB-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP164A3PD-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP164A3PD-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP164A3PD-MD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 1067... |
EDFP264A2PB-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP112A3PB-GD-F-D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PB-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PB-JD-F-D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP112A3PB-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP112A3PB-GDTJ-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PB-GD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PB-GD-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PB-JD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP112A3PB-JD-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
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