EDFP112A3PF-GD-F-R TR Allicdata Electronics
Allicdata Part #:

EDFP112A3PF-GD-F-RTR-ND

Manufacturer Part#:

EDFP112A3PF-GD-F-R TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 24G PARALLEL 800MHZ
More Detail: SDRAM - Mobile LPDDR3 Memory IC 24Gb (192M x 128) ...
DataSheet: EDFP112A3PF-GD-F-R TR datasheetEDFP112A3PF-GD-F-R TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 24Gb (192M x 128)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TA)
Description

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EDFP112A3PF-GD-F-R TR is a type of memory module developed by Yangtze Memory Technologies Co., Ltd. It is a high speed, low power memory chip with a capacity of up to 256 Gbits/second. It is designed for use in a variety of applications including but not limited to server, desktop, laptop, and industrial applications.

This type of memory module features a multi-channel controller, dual-clocking, error correction circuitry and advanced innovation. The advanced design allows for a high-performance data transfer rate of up to 256 Gbits/second. The memory module also utilizes multi-level cell (MLC) technology that provides twice the lifetime of single-level cell (SLC) technology. The MLC architecture allows for greater density, more reliability, and higher levels of performance in comparison to SLC technology.

The EDFP112A3PF-GD-F-R TR module features an advanced DDR3 specification with a wide range of advanced features such as on-die error correction, thermal staking, advanced power management, multiple power down states, advanced thermal management, and system integrator friendly features. These features help to ensure data reliability, flexibility, and system performance.

The DDR3 specification used by the EDFP112A3PF-GD-F-R TR memory module allows for data transfer of up to 2133 mega-transfers/second. This allows for faster data access and read/write speeds for the applications that make use of it. The on-die error correction provides more reliability and uptime for the memory module and helps to reduce the number of errors that occur due to hardware or software faults.

The thermal staking feature of the EDFP112A3PF-GD-F-R TR chip helps to reduce power loss during write operations. By providing additional thermal protection and improved thermal management, the EDFP112A3PF-GD-F-R TR offers better thermal efficiency and improved system reliability. The multiple power down states help to reduce power consumption when the system is not in use or when low power operations are required.

The EDFP112A3PF-GD-F-R TR memory module is designed to be used in a variety of applications. It is designed for use in high performance servers, desktop computers, laptops and embedded systems. The memory module can also be used in industrial applications such as medical and industrial imaging, control systems, robotics, and military applications.

The EDFP112A3PF-GD-F-R TR memory module is an excellent choice for applications requiring high performance and data integrity. With its advanced DDR3 specification, high performance transfer rates, on-die error correction, thermal staking, and advanced power management, the EDFP112A3PF-GD-F-R TR memory module is a highly reliable memory solution.

The specific data is subject to PDF, and the above content is for reference

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