EDFP112A3PF-JDTJ-F-R TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR3
Memory Size:	24Gb (192M x 128)
Clock Frequency:	933MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.14 V ~ 1.95 V
Operating Temperature:	-30°C ~ 105°C (TC)

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Introduction to EDFP112A3PF-JDTJ-F-R TR

The EDFP112A3PF-JDTJ-F-R TR is a type of non-volatile memory device that is designed for high-speed data storage and retrieval. The device is a 4-bit static random access memory (SRAM) that is manufactured using a three-dimensional process that can accommodate more than 16 times the density of conventional SRAMs. It is suitable for use in embedded systems and electronic devices requiring fast, reliable data storage and retrieval.

Application Field

The EDFP112A3PF-JDTJ-F-R TR is commonly used in various applications, ranging from consumer electronics to medical, automotive and industrial applications. Its low power consumption and high performance make it ideal for high-speed memory requirements in embedded systems, such as automotive control units, consumer electronics, and data logging systems.It can also be used in digital video recording systems, digital signal processors, and other embedded systems requiring high speed and reliable data storage. Additionally, its accelerated mode of operation and low standby current can provide valuable performance benefits in applications such as consumer electronics and automotive control systems.

Working Principle

The EDFP112A3PF-JDTJ-F-R TR is an SRAM device composed of memory cells that store binary data. Each cell can store a bit of data, and these cells are arranged into rows and columns on the device. A single row consists of four cells, each of which can store a single bit of data.When the device is enabled, a row address is provided which selects which row of cells will be operated on. Upon receiving the row address, the device then reads and stores the data in the selected row. Once the data has been stored, it can be retrieved at any time by providing the same row address to the device.Data can also be modified by providing a row address and new data, which is then written to the selected row of cells. In this way, the EDFP112A3PF-JDTJ-F-R TR can be used as non-volatile memory for storing and retrieving data.

Conclusion

The EDFP112A3PF-JDTJ-F-R TR is a 4-bit static random access memory device that is designed for high-speed data storage and retrieval. Its low power consumption, high performance, and fast data retrieval make it ideal for memory requirements in embedded systems. It is suitable for use in electronic devices and applications requiring reliable data storage and retrieval, such as consumer electronics, automobiles, and medical applications.

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