EDFP112A3PB-GDTJ-F-R Allicdata Electronics
Allicdata Part #:

EDFP112A3PB-GDTJ-F-R-ND

Manufacturer Part#:

EDFP112A3PB-GDTJ-F-R

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 24G PARALLEL 800MHZ
More Detail: SDRAM - Mobile LPDDR3 Memory IC 24Gb (192M x 128) ...
DataSheet: EDFP112A3PB-GDTJ-F-R datasheetEDFP112A3PB-GDTJ-F-R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 24Gb (192M x 128)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 105°C (TC)
Description

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Memory is an important part of modern computing, and there is a wide variety of memory technologies and products available to fulfill different memory system requirements. EDFP112A3PB-GDTJ-F-R is a recent development in memory technology, and it provides a remarkable range of features and capabilities for applications such as aerospace, automotive, medical and military. In this article, we will take a look at the application field and working principle of EDFP112A3PB-GDTJ-F-R.

EDFP112A3PB-GDTJ-F-R is an innovative new type of memory with an advanced design and high performance. Its main application fields are aerospace, automotive, medical and military, as described in its introduction. To be more specific, this type of memory is especially suitable for use in aircraft, aerospace equipment, high-end vehicles, surveillance systems, medical devices and military equipment. As these applications require high precision, reliability and high speed, EDFP112A3PB-GDTJ-F-R has thus become the preferred choice.

The working principle of EDFP112A3PB-GDTJ-F-R is based on a new three-dimensional memory structure. The structure of this type of memory comprises of several layers, which are interconnected by nano-wires. Each level consists of several functional blocks, which are connected to each other via the nanowires. In this way, EDFP112A3PB-GDTJ-F-R memory can achieve an unprecedented high density and fast access. Moreover, it is equipped with several error correction and security mechanisms, ensuring that the data stored in it remain secure and accurate.

In order to maximize its performance and reliability, EDFP112A3PB-GDTJ-F-R is equipped with various advanced features. These include high-speed signal processing, low latency, concurrent operation, high refresh rate, per-cell error correction and secure encryption. All these features enable the memory to reach its highest performance with utmost precision and reliability. Furthermore, its high reliablity and accuracy makes it suitable for applications where accuracy and performance is crucial.

Finally, the EDFP112A3PB-GDTJ-F-R memory is equipped with an advanced self-diagnostic and self-refresh system to make sure that the stored data remains accurate and trustworthy. This self-diagnostic system also helps to detect any potential errors in the memory and take corrective measures if required. In summary, EDFP112A3PB-GDTJ-F-R is a revolutionary new type of memory with a range of advanced features and capabilities that make it ideal for a variety of applications with demanding requirements.

The specific data is subject to PDF, and the above content is for reference

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