Allicdata Part #: | EDFP164A3PD-GD-F-D-ND |
Manufacturer Part#: |
EDFP164A3PD-GD-F-D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 24G PARALLEL 800MHZ |
More Detail: | SDRAM - Mobile LPDDR3 Memory IC 24Gb (384M x 64) P... |
DataSheet: | EDFP164A3PD-GD-F-D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR3 |
Memory Size: | 24Gb (384M x 64) |
Clock Frequency: | 800MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -30°C ~ 85°C (TA) |
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EDFP164A3PD-GD-F-D Memory Application Field and Working Principle
EDFP164A3PD-GD-F-D is a type of integrated memory device that has its own application field and working principle. EDFP164A3PD-GD-F-D devices are typically used in applications that require large amounts of non-volatile storage, especially in data transmission and signal processing. They are suitable for applications in Aerospace, Automotive, Industrial, and Consumer Electronics, as well as in applications where high reliability and system dependability is required.
The general working principle of this memory device can be explained in two parts. First, EDFP164A3PD-GD-F-D utilizes NAND flash memory technology. This type of non-volatile memory technology is well suited for storing large amounts of data in an extremely small form factor. It is based on a Flash Cell Array which is organized into pages and blocks. Data can be stored and retrieved from any page or block in the array.
Second, EDFP164A3PD-GD-F-D uses a Parametric Band Code (PBC) to improve the reliability of the data stored on it. This code helps maintain data integrity by providing a degree of error correction capability. Additionally, it helps to extend the life of the memory device by providing redundant data storage. This is accomplished by making sure that the data stored in each page is checked against the PBC code, to ensure that the data is still valid.
The EDFP164A3PD-GD-F-D memory device is particularly suitable for data-intensive and high performance applications. It can offer fast data access times and an advanced write/erase capability. The NAND flash technology also ensures that the data is secure and reliable, making it an ideal choice for applications where business-critical data is being stored. It is also designed to be low power and highly efficient, with low power consumption and high write/erase cycles.
EDFP164A3PD-GD-F-D is an excellent choice for applications that require large amounts of non-volatile memory. Its NAND flash based technology is reliable and provides fast data access times. The integrated PBC code provides redundancy and helps extend the life of the memory device. Additionally, its advanced write/erase capability, low power consumption and high write/erase cycles make it an ideal choice for data-intensive and high performance applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EDFP112A3PF-GDTJ-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PF-JD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP112A3PF-JDTJ-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP164A3PB-GD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP164A3PB-JD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP264A2PB-JD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP164A3PD-GD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP164A3PD-JD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP164A3PD-MD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 1067... |
EDFP112A3PB-GDTJ-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PB-JDTJ-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP112A3PD-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PF-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PF-GDTJ-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PF-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP112A3PF-JDTJ-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP164A3PB-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP164A3PB-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP164A3PD-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP164A3PD-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP164A3PD-MD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 1067... |
EDFP264A2PB-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP112A3PB-GD-F-D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PB-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PB-JD-F-D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP112A3PB-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP112A3PB-GDTJ-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PB-GD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PB-GD-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 800M... |
EDFP112A3PB-JD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
EDFP112A3PB-JD-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G PARALLEL 933M... |
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